IXXX110N60B4H1 Todos los transistores

 

IXXX110N60B4H1 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXXX110N60B4H1

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 695 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 210 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2 V @25℃

trⓘ - Tiempo de subida, typ: 48 nS

Coesⓘ - Capacitancia de salida, typ: 440 pF

Encapsulados: PLUS247

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IXXX110N60B4H1 datasheet

 ..1. Size:313K  ixys
ixxx110n60b4h1.pdf pdf_icon

IXXX110N60B4H1

Advance Technical Information VCES = 600V XPTTM 600V IXXK110N60B4H1 IC100 = 110A GenX4TM w/ Diode IXXX110N60B4H1 VCE(sat) 2.0V tfi(typ) = 27ns Extreme Light Punch Through IGBT for 5-30kHz Switching TO-264 (IXXK) Symbol Test Conditions Maximum Ratings G VCES TJ = 25 C to 150 C 600 V C E VCGR TJ = 25 C to 150 C, RGE = 1M 600 V Tab VGES Continuous

 5.1. Size:259K  ixys
ixxx110n65b4h1.pdf pdf_icon

IXXX110N60B4H1

VCES = 650V XPTTM 650V GenX4TM IXXK110N65B4H1 IC110 = 110A w/ Sonic Diode IXXX110N65B4H1 VCE(sat) 2.1V tfi(typ) = 85ns Extreme Light Punch Through IGBT for 10-30kHz Switching TO-264 (IXXK) Symbol Test Conditions Maximum Ratings G C VCES TJ = 25 C to 175 C 650 V E VCGR TJ = 25 C to 175 C, RGE = 1M 650 V Tab VGES Continuous 20 V PLUS247 (IXXX)

 9.1. Size:208K  ixys
ixxx160n65c4.pdf pdf_icon

IXXX110N60B4H1

Preliminary Technical Information VCES = 650V XPTTM 650V IGBTs IXXK160N65C4 IC110 = 160A GenX4TM IXXX160N65C4 VCE(sat) 2.1V tfi(typ) = 30ns Extreme Light Punch Through IGBT for 20-60kHz Switching TO-264 (IXXK) G C Symbol Test Conditions Maximum Ratings E Tab VCES TJ = 25 C to 175 C 650 V VCGR TJ = 25 C to 175 C, RGE = 1M 650 V PLUS247 (IXXX) V

 9.2. Size:238K  ixys
ixxx100n60b3h1.pdf pdf_icon

IXXX110N60B4H1

VCES = 600V XPTTM 600V IXXK100N60B3H1 IC100 = 100A GenX3TM w/ Diode IXXX100N60B3H1 VCE(sat) 1.80V tfi(typ) = 150ns Extreme Light Punch Through IGBT for 10-30kHz Switching TO-264 (IXXK) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V G C VGES Continuous 20 V E Tab VGEM Transient 30

Otros transistores... IXXK110N65B4H1 , IXXK160N65B4 , IXXK160N65C4 , IXXK200N65B4 , IXXK300N60B3 , IXXK300N60C3 , IXXQ30N60B3M , IXXX100N60B3H1 , IRGP4062D , IXXX110N65B4H1 , IXXX160N65B4 , IXXX160N65C4 , IXXX200N65B4 , IXXX300N60C3 , IXYH100N65B3 , IXYH100N65C3 , IXYH120N65B3 .

 

 

 


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