IXYH120N65B3 Todos los transistores

 

IXYH120N65B3 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IXYH120N65B3
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 1360 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 650 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 340 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.9 V @25℃
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 28 nS
   Coesⓘ - Capacitancia de salida, typ: 393 pF
   Paquete / Cubierta: TO247
     - Selección de transistores por parámetros

 

IXYH120N65B3 Datasheet (PDF)

 ..1. Size:232K  ixys
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IXYH120N65B3

Advance Technical InformationVCES = 650VXPTTM 650V IGBT IXYH120N65B3IC110 = 120AGenX3TM VCE(sat) 1.90V tfi(typ) = 107nsExtreme Light Punch ThroughIGBT for 10-30kHz SwitchingTO-247Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 650 VGVCGR TJ = 25C to 175C, RGE = 1M 650 VC T

 4.1. Size:233K  ixys
ixyh120n65c3.pdf pdf_icon

IXYH120N65B3

Advance Technical InformationVCES = 650VXPTTM 650V IGBT IXYH120N65C3IC110 = 120AGenX3TM VCE(sat) 2.8V tfi(typ) = 46nsExtreme Light Punch ThroughIGBT for 20-60kHz SwitchingTO-247Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 650 VGVCGR TJ = 25C to 175C, RGE = 1M 650 VC Tab

 9.1. Size:233K  ixys
ixyh100n65b3.pdf pdf_icon

IXYH120N65B3

Advance Technical InformationVCES = 650VXPTTM 650V IGBT IXYH100N65B3IC110 = 100AGenX3TM VCE(sat) 1.85V tfi(typ) = 73nsExtreme Light Punch ThroughIGBT for 10-30kHz SwitchingTO-247Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 650 VGVCGR TJ = 25C to 175C, RGE = 1M 650 VC Ta

 9.2. Size:232K  ixys
ixyh100n65c3.pdf pdf_icon

IXYH120N65B3

Preliminary Technical InformationVCES = 650VXPTTM 650V IGBT IXYH100N65C3IC110 = 100AGenX3TM VCE(sat) 2.3V tfi(typ) = 60nsExtreme Light Punch ThroughIGBT for 20-60kHz SwitchingTO-247Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 650 VGVCGR TJ = 25C to 175C, RGE = 1M 650 VC

Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

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