IXYH120N65C3 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IXYH120N65C3 datasheet

..1. Size:233K ixys
ixyh120n65c3.pdf pdf_icon

Advance Technical Information VCES = 650V XPTTM 650V IGBT IXYH120N65C3 IC110 = 120A GenX3TM VCE(sat) 2.8V tfi(typ) = 46ns Extreme Light Punch Through IGBT for 20-60kHz Switching TO-247 Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 175 C 650 V G VCGR TJ = 25 C to 175 C, RGE = 1M 650 V C Tab

4.1. Size:232K ixys
ixyh120n65b3.pdf pdf_icon

Advance Technical Information VCES = 650V XPTTM 650V IGBT IXYH120N65B3 IC110 = 120A GenX3TM VCE(sat) 1.90V tfi(typ) = 107ns Extreme Light Punch Through IGBT for 10-30kHz Switching TO-247 Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 175 C 650 V G VCGR TJ = 25 C to 175 C, RGE = 1M 650 V C T

9.1. Size:233K ixys
ixyh100n65b3.pdf pdf_icon

Advance Technical Information VCES = 650V XPTTM 650V IGBT IXYH100N65B3 IC110 = 100A GenX3TM VCE(sat) 1.85V tfi(typ) = 73ns Extreme Light Punch Through IGBT for 10-30kHz Switching TO-247 Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 175 C 650 V G VCGR TJ = 25 C to 175 C, RGE = 1M 650 V C Ta

9.2. Size:232K ixys
ixyh100n65c3.pdf pdf_icon

Preliminary Technical Information VCES = 650V XPTTM 650V IGBT IXYH100N65C3 IC110 = 100A GenX3TM VCE(sat) 2.3V tfi(typ) = 60ns Extreme Light Punch Through IGBT for 20-60kHz Switching TO-247 Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 175 C 650 V G VCGR TJ = 25 C to 175 C, RGE = 1M 650 V C

Otros transistores... IXXX110N65B4H1 , IXXX160N65B4 , IXXX160N65C4 , IXXX200N65B4 , IXXX300N60C3 , IXYH100N65B3 , IXYH100N65C3 , IXYH120N65B3 , FGH40N60SFD , IXYH20N65B3 , IXYH20N65C3 , IXYH24N90C3 , IXYH24N90C3D1 , IXYH30N170C , IXYH30N450HV , IXYH30N65B3D1 , IXYH30N65C3 .