IXYH120N65C3 Todos los transistores

 

IXYH120N65C3 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IXYH120N65C3
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 1361 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 650 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 260 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.8 V @25℃
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 29 nS
   Coesⓘ - Capacitancia de salida, typ: 376 pF
   Paquete / Cubierta: TO247
     - Selección de transistores por parámetros

 

IXYH120N65C3 Datasheet (PDF)

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IXYH120N65C3

Advance Technical InformationVCES = 650VXPTTM 650V IGBT IXYH120N65C3IC110 = 120AGenX3TM VCE(sat) 2.8V tfi(typ) = 46nsExtreme Light Punch ThroughIGBT for 20-60kHz SwitchingTO-247Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 650 VGVCGR TJ = 25C to 175C, RGE = 1M 650 VC Tab

 4.1. Size:232K  ixys
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IXYH120N65C3

Advance Technical InformationVCES = 650VXPTTM 650V IGBT IXYH120N65B3IC110 = 120AGenX3TM VCE(sat) 1.90V tfi(typ) = 107nsExtreme Light Punch ThroughIGBT for 10-30kHz SwitchingTO-247Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 650 VGVCGR TJ = 25C to 175C, RGE = 1M 650 VC T

 9.1. Size:233K  ixys
 ixyh100n65b3.pdf pdf_icon

IXYH120N65C3

Advance Technical InformationVCES = 650VXPTTM 650V IGBT IXYH100N65B3IC110 = 100AGenX3TM VCE(sat) 1.85V tfi(typ) = 73nsExtreme Light Punch ThroughIGBT for 10-30kHz SwitchingTO-247Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 650 VGVCGR TJ = 25C to 175C, RGE = 1M 650 VC Ta

 9.2. Size:232K  ixys
 ixyh100n65c3.pdf pdf_icon

IXYH120N65C3

Preliminary Technical InformationVCES = 650VXPTTM 650V IGBT IXYH100N65C3IC110 = 100AGenX3TM VCE(sat) 2.3V tfi(typ) = 60nsExtreme Light Punch ThroughIGBT for 20-60kHz SwitchingTO-247Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 650 VGVCGR TJ = 25C to 175C, RGE = 1M 650 VC

MOSTRAR MÁS

Otros transistores... IXXX110N65B4H1 , IXXX160N65B4 , IXXX160N65C4 , IXXX200N65B4 , IXXX300N60C3 , IXYH100N65B3 , IXYH100N65C3 , IXYH120N65B3 , FGH40N60SFD , IXYH20N65B3 , IXYH20N65C3 , IXYH24N90C3 , IXYH24N90C3D1 , IXYH30N170C , IXYH30N450HV , IXYH30N65B3D1 , IXYH30N65C3 .

History: IXGH42N30C3 | IXGT30N60C3D1 | HYG30P120H1K1 | DL2G50SH6N | IXYH100N65C3 | IKY40N120CH3 | MMG200DR120B

 

 
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