IXYH20N65C3 Todos los transistores

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IXYH20N65C3 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXYH20N65C3

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 230

Tensión colector-emisor (Vce): 650

Voltaje de saturación colector-emisor (Vce sat): 2.5

Tensión emisor-compuerta (Veg): 20

Corriente del colector DC máxima (Ic): 50

Temperatura operativa máxima (Tj), °C: 175

Tiempo de elevación: 25

Capacitancia de salida (Cc), pF: 66

Empaquetado / Estuche: TO247

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IXYH20N65C3 Datasheet (PDF)

1.1. ixyh20n65c3.pdf Size:257K _igbt_a

IXYH20N65C3
IXYH20N65C3

Preliminary Technical Information XPTTM 650V IGBT VCES = 650V IXYA20N65C3 GenX3TM IC110 = 20A IXYH20N65C3   VCE(sat)    2.50V     tfi(typ) = 28ns Extreme Light Punch Through IGBT for 20-60 kHz Switching TO-263 AA (IXYA) Symbol Test Conditions Maximum Ratings G E VCES TJ = 25°C to 175°C 650 V C (Tab) VCGR TJ = 25°C

1.2. ixyh20n65b3.pdf Size:273K _igbt_a

IXYH20N65C3
IXYH20N65C3

Advance Technical Information XPTTM 650V IGBT VCES = 650V IXYA20N65B3 GenX3TM IC110 = 20A IXYP20N65B3   VCE(sat)    2.10V     IXYH20N65B3 tfi(typ) = 87ns Extreme Light Punch Through IGBT for 5-30kHz Switching TO-263 (IXYA) G E C (Tab) Symbol Test Conditions Maximum Ratings TO-220 (IXYP) VCES TJ = 25°C to 175°C 650

3.1. ixyh20n120c3.pdf Size:229K _ixys

IXYH20N65C3
IXYH20N65C3

1200V XPTTM VCES = 1200V IXYA20N120C3HV GenX3TM IGBTs IC110 = 20A IXYP20N120C3   VCE(sat)    3.4V     IXYH20N120C3 tfi(typ) = 108ns High-Speed IGBT for 20-50 kHz Switching TO-263HV (IXYA) G E Symbol Test Conditions Maximum Ratings C (Tab) VCES TJ = 25°C to 175°C 1200 V TO-220 (IXYP) VCGR TJ = 25°C to 175°C, RGE

3.2. ixyh20n120c3d1.pdf Size:190K _ixys

IXYH20N65C3
IXYH20N65C3

1200V XPTTM IGBT VCES = 1200V IXYH20N120C3D1 GenX3TM w/ Diode IC110 = 17A   VCE(sat)    3.4V     tfi(typ) = 108ns High-Speed IGBT for 20-50 kHz Switching TO-247 AD Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C, RGE = 1M 1200 V G VGES Continuous ±20 V C Tab E V

3.3. ixyh20n120c3.pdf Size:428K _igbt_a

IXYH20N65C3
IXYH20N65C3

N E W P R O D U C T B R I E F Efficiency Through Technology 1200V XPT™ IGBTs Extreme-Light Punch-Through IGBTs for High-Speed Hard-Switching Applications October 2012 OVERVIEW TO-247 IXYS Corporation expands its 1200V XPT™ IGBT product line. With current ratings of up to 220A, these new devices are designed to minimize switching losses in high-voltage, hard-switching applica- tion

3.4. ixyh20n120c3d1.pdf Size:428K _igbt_a

IXYH20N65C3
IXYH20N65C3

N E W P R O D U C T B R I E F Efficiency Through Technology 1200V XPT™ IGBTs Extreme-Light Punch-Through IGBTs for High-Speed Hard-Switching Applications October 2012 OVERVIEW TO-247 IXYS Corporation expands its 1200V XPT™ IGBT product line. With current ratings of up to 220A, these new devices are designed to minimize switching losses in high-voltage, hard-switching applica- tion

Otros transistores... IXXX160N65C4 , IXXX200N65B4 , IXXX300N60C3 , IXYH100N65B3 , IXYH100N65C3 , IXYH120N65B3 , IXYH120N65C3 , IXYH20N65B3 , IXGR40N60C2D1 , IXYH24N90C3 , IXYH24N90C3D1 , IXYH30N170C , IXYH30N450HV , IXYH30N65B3D1 , IXYH30N65C3 , IXYH30N65C3H1 , IXYP20N65B3 .

 


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