IXYH24N90C3 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXYH24N90C3
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 240 W
|Vce|ⓘ - Tensión máxima colector-emisor: 900 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 44 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.7 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 6 V
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 36 nS
Coesⓘ - Capacitancia de salida, typ: 64 pF
Qgⓘ - Carga total de la puerta, typ: 40 nC
Paquete / Cubierta: TO247
Búsqueda de reemplazo de IXYH24N90C3 - IGBT
IXYH24N90C3 Datasheet (PDF)
ixyh24n90c3.pdf
Advance Technical Information900V XPTTM IGBT VCES = 900VIXYH24N90C3GenX3TM IC110 = 24A VCE(sat) 2.7V tfi(typ) = 90nsHigh-Speed IGBTfor 20-50 kHz SwitchingTO-247Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 900 VVCGR TJ = 25C to 175C, RGE = 1M 900 VVGES Continuous 20 VGVGEM Transient 30 VCETabIC25 TC = 25
ixyh24n90c3d1.pdf
Advance Technical Information900V XPTTM IGBT VCES = 900VIXYH24N90C3D1GenX3TM w/Diode IC90 = 24A VCE(sat) 2.7V tfi(typ) = 90nsHigh-Speed IGBTfor 20-50 kHz SwitchingTO-247Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 900 VVCGR TJ = 25C to 150C, RGE = 1M 900 VVGES Continuous 20 VGVGEM Transient 30 VCETabIC25
ixyh20n120c3d1.pdf
1200V XPTTM IGBT VCES = 1200VIXYH20N120C3D1GenX3TM w/ Diode IC110 = 17A VCE(sat) 3.4V tfi(typ) = 108nsHigh-Speed IGBTfor 20-50 kHz SwitchingTO-247 ADSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C, RGE = 1M 1200 VGVGES Continuous 20 VC TabEV
ixyh20n65b3.pdf
Advance Technical InformationXPTTM 650V IGBT VCES = 650VIXYA20N65B3GenX3TM IC110 = 20AIXYP20N65B3 VCE(sat) 2.10V IXYH20N65B3tfi(typ) = 87nsExtreme Light Punch ThroughIGBT for 5-30kHz SwitchingTO-263 (IXYA)GEC (Tab)Symbol Test Conditions Maximum RatingsTO-220 (IXYP)VCES TJ = 25C to 175C 650
ixyh20n120c3.pdf
N E W P R O D U C T B R I E FEfficiency Through Technology1200V XPT IGBTsExtreme-Light Punch-Through IGBTs for High-Speed Hard-Switching ApplicationsOctober 2012OVERVIEWTO-247IXYS Corporation expands its 1200V XPT IGBT product line. With current ratings of up to 220A, these new devices are designed to minimize switching losses in high-voltage, hard-switching applica-tion
ixyh20n65c3.pdf
Preliminary Technical InformationXPTTM 650V IGBT VCES = 650VIXYA20N65C3GenX3TM IC110 = 20AIXYH20N65C3 VCE(sat) 2.50V tfi(typ) = 28nsExtreme Light Punch ThroughIGBT for 20-60 kHz SwitchingTO-263 AA (IXYA)Symbol Test Conditions Maximum RatingsGEVCES TJ = 25C to 175C 650 VC (Tab)VCGR TJ = 25C
ixya20n120c3hv ixyp20n120c3 ixyh20n120c3.pdf
1200V XPTTM VCES = 1200VIXYA20N120C3HVGenX3TM IGBTs IC110 = 20AIXYP20N120C3 VCE(sat) 3.4V IXYH20N120C3tfi(typ) = 108nsHigh-Speed IGBTfor 20-50 kHz SwitchingTO-263HV (IXYA)GESymbol Test Conditions Maximum RatingsC (Tab)VCES TJ = 25C to 175C 1200 VTO-220 (IXYP)VCGR TJ = 25C to 175C, RGE
Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
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