IXYH30N65B3D1 Todos los transistores

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 ixyh30n65b3d1.pdf

Advance Technical Information XPTTM 650V IGBT VCES = 650V IXYH30N65B3D1 GenX3TM w/ Diode IC110 = 30A IXYQ30N65B3D1 VCE(sat) 2.1V tfi(typ) = 33ns Extreme Light Punch Through IGBT for 5-30kHz Switching TO-247 (IXYH) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 175 C 650 V VCGR TJ = 25 C to 175 C,

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 ixyh30n65c3.pdf

XPTTM 650V IGBT VCES = 650V IXYP30N65C3 GenX3TM IC110 = 30A IXYH30N65C3 VCE(sat) 2.7V tfi(typ) = 24ns Extreme Light Punch Through IGBT for 20-60kHz Switching TO-220 Symbol Test Conditions Maximum Ratings G C Tab VCES TJ = 25 C to 175 C 650 V E VCGR TJ = 25 C to 175 C, RGE = 1M 650 V TO-247 VGES Conti

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 ixyh30n65c3h1.pdf

Preliminary Technical Information XPTTM 650V IGBT VCES = 650V IXYT30N65C3H1HV GenX3TM w/ Sonic IC110 = 30A IXYH30N65C3H1 Diode VCE(sat) 2.7V tfi(typ) = 24ns Extreme Light Punch Through IGBT for 20-60kHz Switching TO-268HV Symbol Test Conditions Maximum Ratings G VCES TJ = 25 C to 175 C 650 V E VCGR TJ = 25

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 ixyp30n120c3 ixyh30n120c3.pdf

1200V XPTTM VCES = 1200V IXYP30N120C3 GenX3TM IGBTs IC110 = 30A IXYH30N120C3 VCE(sat) 3.3V tfi(typ) = 88ns High-Speed IGBT for 20-50 kHz Switching TO-220 (IXYP) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 175 C 1200 V G C Tab E VCGR TJ = 25 C to 175 C, RGE = 1M 1200 V VGES Continuous 2

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 ixyh30n120c3.pdf

N E W P R O D U C T B R I E F Efficiency Through Technology 1200V XPT IGBTs Extreme-Light Punch-Through IGBTs for High-Speed Hard-Switching Applications October 2012 OVERVIEW TO-247 IXYS Corporation expands its 1200V XPT IGBT product line. With current ratings of up to 220A, these new devices are designed to minimize switching losses in high-voltage, hard-switching applica- tion

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 ixyh30n120c3d1.pdf

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 ixyh30n450hv.pdf

Advance Technical Information High Voltage XPTTM VCES = 4500V IXYT30N450HV IGBT IXYH30N450HV IC110 = 30A VCE(sat) 3.9V TO-268HV (IXYT) G E C (Tab) Symbol Test Conditions Maximum Ratings VCES TC = 25 C to 150 C 4500 V TO-247HV (IXYH) VCGR TJ = 25 C to 150 C, RGE = 1M 4500 V VGES Continuous 20 V VGEM Transient 30 V IC25 TC = 25 C 60 A G I

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 ixyh30n170c.pdf

Advance Technical Information VCES = 1700V High Voltage IXYH30N170C IC110 = 30A XPTTM IGBT VCE(sat) 4.8V tfi(typ) = 102ns TO-247 Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 175 C 1700 V G VCGR TJ = 25 C to 175 C, RGE = 1M 1700 V C Tab E VGES Continuous 20 V VGEM Transient 30 V G =