IXYP30N65C3 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IXYP30N65C3 Datasheet (PDF)

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XPTTM 650V IGBT VCES = 650VIXYP30N65C3GenX3TM IC110 = 30AIXYH30N65C3 VCE(sat) 2.7V tfi(typ) = 24nsExtreme Light Punch ThroughIGBT for 20-60kHz SwitchingTO-220Symbol Test Conditions Maximum RatingsGCTabVCES TJ = 25C to 175C 650 V EVCGR TJ = 25C to 175C, RGE = 1M 650 VTO-247VGES Conti

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1200V XPTTM VCES = 1200VIXYP30N120C3GenX3TM IGBTs IC110 = 30AIXYH30N120C3 VCE(sat) 3.3V tfi(typ) = 88nsHigh-Speed IGBTfor 20-50 kHz SwitchingTO-220 (IXYP)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 1200 VGCTabEVCGR TJ = 25C to 175C, RGE = 1M 1200 VVGES Continuous 2

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N E W P R O D U C T B R I E FEfficiency Through Technology1200V XPT IGBTsExtreme-Light Punch-Through IGBTs for High-Speed Hard-Switching ApplicationsOctober 2012OVERVIEWTO-247IXYS Corporation expands its 1200V XPT IGBT product line. With current ratings of up to 220A, these new devices are designed to minimize switching losses in high-voltage, hard-switching applica-tion

Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .