IXYX120N120B3 Todos los transistores

 ..1. Size:164K  ixys
 ixyx120n120b3.pdf

Advance Technical Information 1200V XPTTM IGBT VCES = 1200V IXYK120N120B3 GenX3TM IC110 = 120A IXYX120N120B3 VCE(sat) 2.2V tfi(typ) = 260ns High-Speed IGBT for 10-30 kHz Switching TO-264P (IXYK) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 175 C 1200 V G VCGR TJ = 25 C to 175 C, RGE = 1M 120

 3.1. Size:212K  ixys
 ixyk120n120c3 ixyx120n120c3.pdf

1200V XPTTM IGBTs VCES = 1200V IXYK120N120C3 GenX3TM IC110 = 120A IXYX120N120C3 VCE(sat) 3.20V tfi(typ) = 96ns High-Speed IGBTs for 20-50 kHz Switching TO-264 (IXYK) Symbol Test Conditions Maximum Ratings G C VCES TJ = 25 C to 175 C 1200 V E Tab VCGR TJ = 25 C to 175 C, RGE = 1M 1200 V VGES Continuous

 3.2. Size:204K  ixys
 ixyx120n120c3.pdf

Advance Technical Information 1200V XPTTM IGBTs VCES = 1200V IXYK120N120C3 GenX3TM IC110 = 120A IXYX120N120C3 VCE(sat) 3.5V tfi(typ) = 90ns High-Speed IGBTs for 20-50 kHz Switching TO-264 (IXYK) Symbol Test Conditions Maximum Ratings G C VCES TJ = 25 C to 175 C 1200 V E Tab VCGR TJ = 25 C to 175 C, RGE = 1M 1200 V VGES Continuous 20 V PLUS247

 9.1. Size:205K  ixys
 ixyx140n90c3.pdf

Preliminary Technical Information 900V XPTTM IGBTs VCES = 900V IXYK140N90C3 GenX3TM IC110 = 140A IXYX140N90C3 VCE(sat) 2.7V tfi(typ) = 105ns High-Speed IGBTs for 20-50 kHz Switching TO-264 (IXYK) Symbol Test Conditions Maximum Ratings G C VCES TJ = 25 C to 175 C 900 V E Tab VCGR TJ = 25 C to 175 C, RGE = 1M 900 V VGES Continuous 20 V PLUS247 (

 9.2. Size:205K  ixys
 ixyx100n120b3.pdf

Preliminary Technical Information 1200V XPTTM IGBTs VCES = 1200V IXYK100N120B3 GenX3TM IC110 = 100A IXYX100N120B3 VCE(sat) 2.6V tfi(typ) = 240ns Extreme Light Punch Through IGBT for 5-30 kHz Switching TO-264 (IXYK) G Symbol Test Conditions Maximum Ratings C E VCES TJ = 25 C to 175 C 1200 V Tab VCGR TJ = 25 C to 175 C, RGE = 1M 1200 V PLUS247 (IX

 9.3. Size:289K  ixys
 ixyk100n120c3 ixyx100n120c3.pdf

1200V XPTTM IGBT VCES = 1200V IXYK100N120C3 GenX3TM IC110 = 100A IXYX100N120C3 VCE(sat) 3.50V tfi(typ) = 110ns High-Speed IGBT for 20-50 kHz Switching TO-264 (IXYK) Symbol Test Conditions Maximum Ratings G C VCES TJ = 25 C to 175 C 1200 V E Tab VCGR TJ = 25 C to 175 C, RGE = 1M 1200 V VGES Continuous

 9.4. Size:229K  ixys
 ixyx100n65b3d1.pdf

 9.5. Size:201K  ixys
 ixyx100n120c3.pdf

Advance Technical Information 1200V XPTTM IGBTs VCES = 1200V IXYK100N120C3 GenX3TM IC110 = 100A IXYX100N120C3 VCE(sat) 3.5V tfi(typ) = 110ns High-Speed IGBT for 20-50 kHz Switching TO-264 (IXYK) Symbol Test Conditions Maximum Ratings G C VCES TJ = 25 C to 175 C 1200 V E Tab VCGR TJ = 25 C to 175 C, RGE = 1M 1200 V VGES Continuous 20 V PLUS247

 9.6. Size:227K  ixys
 ixyx100n65c3d1.pdf

Advance Technical Information VCES = 650V XPTTM 650V IGBT IXYK100N65C3D1 IC110 = 100A GenX3TM w/ Diode IXYX100N65C3D1 VCE(sat) 2.3V tfi(typ) = 60ns Extreme Light Punch Through IGBT for 20-60kHz Switching TO-264 (IXYK) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 175 C 650 V G C VCGR TJ = 25 C to