IXYH40N65C3 Todos los transistores

 

IXYH40N65C3 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXYH40N65C3

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 300 W

|Vce|ⓘ - Tensión máxima colector-emisor: 650 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.35 V @25℃

trⓘ - Tiempo de subida, typ: 40 nS

Coesⓘ - Capacitancia de salida, typ: 118 pF

Encapsulados: TO247

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IXYH40N65C3 datasheet

 ..1. Size:171K  ixys
ixyh40n65c3.pdf pdf_icon

IXYH40N65C3

Preliminary Technical Information XPTTM 650V IGBT VCES = 650V IXYH40N65C3 GenX3TM IC110 = 40A VCE(sat) 2.35V tfi(typ) = 20ns Extreme Light Punch Through IGBT for 20-60 kHz Switching TO-247 AD Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 175 C 650 V VCGR TJ = 25 C to 175 C, RGE = 1M 650 V G V

 0.1. Size:197K  ixys
ixyh40n65c3d1.pdf pdf_icon

IXYH40N65C3

Advance Technical Information XPTTM 650V IGBT VCES = 650V IXYH40N65C3D1 GenX3TM w/ Diode IC110 = 40A IXYQ40N65C3D1 VCE(sat) 2.35V tfi(typ) = 20ns Extreme Light Punch Through IGBT for 20-60 kHz Switching TO-247 (IXYH) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 175 C 650 V VCGR TJ = 25 C to 175

 0.2. Size:183K  ixys
ixyh40n65c3h1.pdf pdf_icon

IXYH40N65C3

XPTTM 650V IGBT VCES = 650V IXYH40N65C3H1 GenX3TM w/ Sonic Diode IC110 = 40A VCE(sat) 2.35V tfi(typ) = 52ns Extreme Light Punch Through IGBT for 20-60 kHz Switching TO-247 Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 175 C 650 V VCGR TJ = 25 C to 175 C, RGE = 1M 650 V G VGES Continuous 20 V

 5.1. Size:170K  ixys
ixyh40n65b3.pdf pdf_icon

IXYH40N65C3

Advance Technical Information XPTTM 650V IGBT VCES = 650V IXYH40N65B3 GenX3TM IC110 = 40A VCE(sat) 2.0V tfi(typ) = 73ns Extreme Light Punch Through IGBT for 5-30kHz Switching Symbol Test Conditions Maximum Ratings TO-247 (IXYH) VCES TJ = 25 C to 175 C 650 V VCGR TJ = 25 C to 175 C, RGE = 1M 650 V VGES Con

Otros transistores... IXYT30N65C3H1HV , IXYX100N120B3 , IXYX100N65B3D1 , IXYX100N65C3D1 , IXYX120N120B3 , IXYX40N450HV , IXYH40N65B3 , IXYH40N65B3D1 , GT30G124 , IXYH40N65C3D1 , IXYH40N65C3H1 , IXYH40N90C3 , IXYH40N90C3D1 , IXYH50N65C3 , IXYH50N65C3D1 , IXYH50N65C3H1 , IXYH60N90C3 .

 

 

 


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