HGTP10N120BN Todos los transistores

 

HGTP10N120BN IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HGTP10N120BN

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 298 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 35 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.45 V @25℃

trⓘ - Tiempo de subida, typ: 11 nS

Encapsulados: TO220

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HGTP10N120BN datasheet

 ..1. Size:196K  fairchild semi
hgt1s10n120bn hgth10n120bn hgtp10n120bn.pdf pdf_icon

HGTP10N120BN

HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS Data Sheet August 2002 35A, 1200V, NPT Series N-Channel IGBT Features The HGTG10N120BN, HGTP10N120BN and 35A, 1200V, TC = 25oC HGT1S10N120BNS are Non-Punch Through (NPT) IGBT 1200V Switching SOA Capability designs. They are new members of the MOS gated high Typical Fall Time. . . . . . . . . . . . . . . . 140ns at TJ = 150oC vo

 ..2. Size:296K  onsemi
hgtg10n120bn hgtp10n120bn hgt1s10n120bns.pdf pdf_icon

HGTP10N120BN

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 7.2. Size:293K  1
hgtp10n40f1d hgtp10n50f1d.pdf pdf_icon

HGTP10N120BN

Otros transistores... HGTH12N40E1 , HGTH12N40E1D , HGTH12N50C1 , HGTH12N50C1D , HGTH12N50E1 , HGTH12N50E1D , HGTM12N40C1 , HGTM12N40E1 , FGH40N60SFD , HGTP10N40C1 , HGTP10N40C1D , HGTP10N40E1 , HGTP10N40E1D , HGTP10N40F1D , HGTP10N50C1 , HGTP10N50C1D , HGTP10N50E1 .

 

 

 


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