HGTP10N120BN - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HGTP10N120BN
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 298 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 35 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.45 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 11 nS
Paquete / Cubierta: TO220
Búsqueda de reemplazo de HGTP10N120BN IGBT
HGTP10N120BN Datasheet (PDF)
hgt1s10n120bn hgth10n120bn hgtp10n120bn.pdf

HGTG10N120BN, HGTP10N120BN,HGT1S10N120BNSData Sheet August 200235A, 1200V, NPT Series N-Channel IGBT FeaturesThe HGTG10N120BN, HGTP10N120BN and 35A, 1200V, TC = 25oCHGT1S10N120BNS are Non-Punch Through (NPT) IGBT 1200V Switching SOA Capabilitydesigns. They are new members of the MOS gated high Typical Fall Time. . . . . . . . . . . . . . . . 140ns at TJ = 150oCvo
hgtg10n120bn hgtp10n120bn hgt1s10n120bns.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
hgth12n40c1 hgth12n40e1 hgth12n50c1 hgth12n50e1 hgtm12n40c1 hgtm12n40e1 hgtm12n50c1 hgtm12n50e1 hgtp10n40c1 hgtp10n40e1 hgtp10n50c1 hgtp10n50e1.pdf

Otros transistores... HGTH12N40E1 , HGTH12N40E1D , HGTH12N50C1 , HGTH12N50C1D , HGTH12N50E1 , HGTH12N50E1D , HGTM12N40C1 , HGTM12N40E1 , GT50JR22 , HGTP10N40C1 , HGTP10N40C1D , HGTP10N40E1 , HGTP10N40E1D , HGTP10N40F1D , HGTP10N50C1 , HGTP10N50C1D , HGTP10N50E1 .
History: 1MBI400V-120-50
History: 1MBI400V-120-50



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