HGTP10N120BN Todos los transistores

 

HGTP10N120BN - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HGTP10N120BN
   Tipo de transistor: IGBT
   Código de marcado: 10N120BN
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 298 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 35 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.45 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.8(typ) V
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 11 nS
   Qgⓘ - Carga total de la puerta, typ: 100 nC
   Paquete / Cubierta: TO220
     - Selección de transistores por parámetros

 

HGTP10N120BN Datasheet (PDF)

 ..1. Size:196K  fairchild semi
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HGTP10N120BN

HGTG10N120BN, HGTP10N120BN,HGT1S10N120BNSData Sheet August 200235A, 1200V, NPT Series N-Channel IGBT FeaturesThe HGTG10N120BN, HGTP10N120BN and 35A, 1200V, TC = 25oCHGT1S10N120BNS are Non-Punch Through (NPT) IGBT 1200V Switching SOA Capabilitydesigns. They are new members of the MOS gated high Typical Fall Time. . . . . . . . . . . . . . . . 140ns at TJ = 150oCvo

 ..2. Size:296K  onsemi
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HGTP10N120BN

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 7.2. Size:293K  1
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HGTP10N120BN

Otros transistores... HGTH12N40E1 , HGTH12N40E1D , HGTH12N50C1 , HGTH12N50C1D , HGTH12N50E1 , HGTH12N50E1D , HGTM12N40C1 , HGTM12N40E1 , FGH40N60SFD , HGTP10N40C1 , HGTP10N40C1D , HGTP10N40E1 , HGTP10N40E1D , HGTP10N40F1D , HGTP10N50C1 , HGTP10N50C1D , HGTP10N50E1 .

 

 
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