IXYK100N120B3 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXYK100N120B3
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 1150 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 225 A
Tjⓘ - Temperatura máxima de unión: 175 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.6 V @25℃
trⓘ - Tiempo de subida, typ: 90 nS
Coesⓘ - Capacitancia de salida, typ: 367 pF
Encapsulados: TO264
Búsqueda de reemplazo de IXYK100N120B3 IGBT
- Selección ⓘ de transistores por parámetros
IXYK100N120B3 datasheet
ixyk100n120b3.pdf
Preliminary Technical Information 1200V XPTTM IGBTs VCES = 1200V IXYK100N120B3 GenX3TM IC110 = 100A IXYX100N120B3 VCE(sat) 2.6V tfi(typ) = 240ns Extreme Light Punch Through IGBT for 5-30 kHz Switching TO-264 (IXYK) G Symbol Test Conditions Maximum Ratings C E VCES TJ = 25 C to 175 C 1200 V Tab VCGR TJ = 25 C to 175 C, RGE = 1M 1200 V PLUS247 (IX
ixyk100n120c3.pdf
N E W P R O D U C T B R I E F Efficiency Through Technology 1200V XPT IGBTs Extreme-Light Punch-Through IGBTs for High-Speed Hard-Switching Applications October 2012 OVERVIEW TO-247 IXYS Corporation expands its 1200V XPT IGBT product line. With current ratings of up to 220A, these new devices are designed to minimize switching losses in high-voltage, hard-switching applica- tion
ixyk100n120c3 ixyx100n120c3.pdf
1200V XPTTM IGBT VCES = 1200V IXYK100N120C3 GenX3TM IC110 = 100A IXYX100N120C3 VCE(sat) 3.50V tfi(typ) = 110ns High-Speed IGBT for 20-50 kHz Switching TO-264 (IXYK) Symbol Test Conditions Maximum Ratings G C VCES TJ = 25 C to 175 C 1200 V E Tab VCGR TJ = 25 C to 175 C, RGE = 1M 1200 V VGES Continuous
Otros transistores... IXYH50N65C3D1 , IXYH50N65C3H1 , IXYH60N90C3 , IXYH75N65C3 , IXYH75N65C3D1 , IXYH75N65C3H1 , IXYH80N90C3 , IXYJ30N120C3D1 , YGW40N65F1 , IXYK100N65B3D1 , IXYK100N65C3D1 , IXYK120N120B3 , IXYK140N90C3 , IXYL60N450 , IXYP10N65C3 , IXYP10N65C3D1 , IXYP10N65C3D1M .
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
Popular searches
irf640 datasheet | c945 transistor equivalent | irfz44 datasheet | tip3055 transistor | irf530 datasheet | 2sc2625 | 2sc1815 transistor | 2sd718





