IXYP10N65C3D1 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXYP10N65C3D1  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 160 W

|Vce|ⓘ - Tensión máxima colector-emisor: 650 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 30 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.5 V @25℃

trⓘ - Tiempo de subida, typ: 26 nS

Coesⓘ - Capacitancia de salida, typ: 42 pF

Encapsulados: TO220

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IXYP10N65C3D1 datasheet

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IXYP10N65C3D1

Preliminary Technical Information XPTTM 650V IGBT VCES = 650V IXYP10N65C3D1 GenX3TM w/Diode IC110 = 9A VCE(sat) 2.50V tfi(typ) = 23ns Extreme Light Punch Through IGBT for 20-60kHz Switching TO-220 Symbol Test Conditions Maximum Ratings G VCES TJ = 25 C to 175 C 650 V C Tab E VCGR TJ = 25 C to 175 C, RGE

 0.1. Size:196K  ixys
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IXYP10N65C3D1

Preliminary Technical Information XPTTM 650V IGBT VCES = 650V IXYP10N65C3D1M GenX3TM w/Diode IC110 = 7A VCE(sat) 2.6V (Electrically Isolated Tab) tfi(typ) = 23ns Extreme Light Punch Through IGBT for 20-60kHz Switching OVERMOLDED TO-220 Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 175 C 650 V VCGR

 3.1. Size:214K  ixys
 ixyp10n65c3.pdf pdf_icon

IXYP10N65C3D1

Preliminary Technical Information XPTTM 650V IGBT VCES = 650V IXYP10N65C3 GenX3TM IC110 = 10A VCE(sat) 2.50V tfi(typ) = 23ns Extreme Light Punch Through IGBT for 20-60kHz Switching TO-220 Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 175 C 650 V VCGR TJ = 25 C to 175 C, RGE = 1M 650 V G C Ta

 9.1. Size:222K  ixys
 ixyp15n65c3d1.pdf pdf_icon

IXYP10N65C3D1

Preliminary Technical Information XPTTM 650V IGBT VCES = 650V IXYA15N65C3D1 GenX3TM w/Diode IC110 = 15A IXYP15N65C3D1 VCE(sat) 2.5V tfi(typ) = 28ns Extreme Light Punch Through IGBT for 20-60kHz Switching TO-263 AA (IXYA) G Symbol Test Conditions Maximum Ratings E C (Tab) VCES TJ = 25 C to 175 C 650 V VCGR

MOSTRAR MÁS

Otros transistores... IXYJ30N120C3D1, IXYK100N120B3, IXYK100N65B3D1, IXYK100N65C3D1, IXYK120N120B3, IXYK140N90C3, IXYL60N450, IXYP10N65C3, IRG4PC50U, IXYP10N65C3D1M, IXYP15N65C3, IXYP15N65C3D1, IXYP15N65C3D1M, IXGR72N60C3, IXGT25N250HV, IXGT6N170AHV, IXGX50N60AU1S