IXYP15N65C3 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXYP15N65C3
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 200 W
|Vce|ⓘ - Tensión máxima colector-emisor: 650 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 38 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.5 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 6 V
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 20 nS
Coesⓘ - Capacitancia de salida, typ: 37 pF
Qgⓘ - Carga total de la puerta, typ: 19 nC
Paquete / Cubierta: TO220
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IXYP15N65C3 Datasheet (PDF)
ixyp15n65c3.pdf
Preliminary Technical InformationXPTTM 650V IGBT VCES = 650VIXYP15N65C3GenX3TM IC110 = 15A VCE(sat) 2.5V tfi(typ) = 28nsExtreme Light Punch ThroughIGBT for 20-60kHz SwitchingTO-220Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 650 VVCGR TJ = 25C to 175C, RGE = 1M 650 VGCTab
ixyp15n65c3d1.pdf
Preliminary Technical InformationXPTTM 650V IGBT VCES = 650VIXYA15N65C3D1GenX3TM w/Diode IC110 = 15AIXYP15N65C3D1 VCE(sat) 2.5V tfi(typ) = 28nsExtreme Light Punch ThroughIGBT for 20-60kHz SwitchingTO-263 AA (IXYA)GSymbol Test Conditions Maximum RatingsEC (Tab)VCES TJ = 25C to 175C 650 VVCGR
ixyp15n65c3d1m.pdf
Preliminary Technical InformationXPTTM 650V IGBT VCES = 650VIXYP15N65C3D1MGenX3TM w/Diode IC110 = 9A VCE(sat) 2.5V (Electrically Isolated Tab)tfi(typ) = 28nsExtreme Light Punch ThroughIGBT for 20-60kHz SwitchingOVERMOLDED TO-220Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 650 VVCGR
ixyp10n65c3d1.pdf
Preliminary Technical InformationXPTTM 650V IGBT VCES = 650VIXYP10N65C3D1GenX3TM w/Diode IC110 = 9A VCE(sat) 2.50V tfi(typ) = 23nsExtreme Light Punch ThroughIGBT for 20-60kHz SwitchingTO-220Symbol Test Conditions Maximum RatingsGVCES TJ = 25C to 175C 650 VCTabEVCGR TJ = 25C to 175C, RGE
ixyp10n65c3d1m.pdf
Preliminary Technical InformationXPTTM 650V IGBT VCES = 650VIXYP10N65C3D1MGenX3TM w/Diode IC110 = 7A VCE(sat) 2.6V (Electrically Isolated Tab)tfi(typ) = 23nsExtreme Light Punch ThroughIGBT for 20-60kHz SwitchingOVERMOLDED TO-220Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 650 VVCGR
ixyp10n65c3.pdf
Preliminary Technical InformationXPTTM 650V IGBT VCES = 650VIXYP10N65C3GenX3TM IC110 = 10A VCE(sat) 2.50V tfi(typ) = 23nsExtreme Light Punch ThroughIGBT for 20-60kHz SwitchingTO-220Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 650 VVCGR TJ = 25C to 175C, RGE = 1M 650 VGCTa
Otros transistores... IXYK100N65B3D1 , IXYK100N65C3D1 , IXYK120N120B3 , IXYK140N90C3 , IXYL60N450 , IXYP10N65C3 , IXYP10N65C3D1 , IXYP10N65C3D1M , RJH3047 , IXYP15N65C3D1 , IXYP15N65C3D1M , IXGR72N60C3 , IXGT25N250HV , IXGT6N170AHV , IXGX50N60AU1S , IXXA30N65C3HV , IXXR100N60B3H1 .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2