IXXR110N65B4H1 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXXR110N65B4H1
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 455 W
|Vce|ⓘ - Tensión máxima colector-emisor: 650 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 150 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.2 V @25℃
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 46 nS
Coesⓘ - Capacitancia de salida, typ: 440 pF
Paquete / Cubierta: ISOPLUS247
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IXXR110N65B4H1 Datasheet (PDF)
ixxr110n65b4h1.pdf
VCES = 650VXPTTM 650V GenX4TM IXXR110N65B4H1IC110 = 70Aw/ Sonic Diode VCE(sat) 2.20V (Electrically Isolated Tab)tfi(typ) = 85nsExtreme Light Punch ThroughIGBT for 10-30kHz SwitchingISOPLUS247TMSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 650 VVCGR TJ = 25C to 175C, RGE = 1M 650 VGCVGES Continuous 20 V Isolated Ta
ixxr110n60b4h1.pdf
Advance Technical InformationXPTTM 600V VCES = 600VIXXR110N60B4H1GenX4TM w/ Diode IC110 = 75A VCE(sat) 2.0V (Electrically Isolated Tab)tfi(typ) = 27nsExtreme Light Punch ThroughIGBT for 5-30kHz SwitchingISOPLUS247TMSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous
ixxr100n60b3h1.pdf
Advance Technical InformationXPTTM 600V VCES = 600VIXXR100N60B3H1GenX3TM w/ Diode IC110 = 68A VCE(sat) 1.80V (Electrically Isolated Tab)tfi(typ) = 150nsExtreme Light Punch ThroughIGBT for 10-30kHz SwitchingISOPLUS247TMSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous
Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
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