HIA30N60BP Todos los transistores

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 hia30n60bp.pdf

Dec 2013 VCES = 600 V IC = 30 A HIA30N60BP VCE(sat) typ = 2.2 V 600V PT IGBT TO-247 FEATURES Low VCE(sat) Maximum Junction Temperature 150 G C E Short Circuit Withstand Time 5 Designed for Operation Between 1-20KHz Very tight Parameter Distribution High Ruggedness, Temperature stable behavior Absolute Maximum Ratings Symbol Parameter Value Units VCES Collector-

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 hia30n65t-sa.pdf

Sep 2023 HIA30N65T-SA 650V N-Channel Trench Field Stop IGBT Features Key Parameters Very Low VCE(sat) Parameter Value Unit VCES 650 V Extremely low switching loss IC 30 A Excellent stability and uniformity VCE(sat) 1.45 V Soft Fast Reverse Recovery Diode Etot 0.698 mJ Short Circuit Withstand Time 5.0 Maximum Junction temperature, TJ(max)=175 Package &

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 hia30n140ih-da.pdf

September 2022 HIA30N140IH-DA 1400V N-Channel Trench Field Stop IGBT Features Key Parameters Very Low VCE(sat) Parameter Value Unit VCES 1400 V Extremely low switching loss IC 30 A Excellent stability and uniformity VCE(sat) 1.50 V 1400V Breakdown voltage Eoff 1.41 mJ Maximum Junction temperature, TJ(max)=175 Package & Internal Circuit Application TO-247 SY

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 hia30n140cih-da.pdf

Aug. 2023 HIA30N140CIH-DA 1400V N-Channel Trench Field Stop IGBT Features Key Parameters Very Low VCE(sat) Parameter Value Unit VCES 1400 V Extremely low switching loss IC 30 A Excellent stability and uniformity VCE(sat) 1.65 V 1400V Breakdown voltage Eoff 1.63 mJ Maximum Junction temperature, TJ(max)=175 Package & Internal Circuit Application TO-247 SYMBOL