HIH30N120TF Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HIH30N120TF  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 329 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 60 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2 V @25℃

trⓘ - Tiempo de subida, typ: 50 nS

Coesⓘ - Capacitancia de salida, typ: 105 pF

Encapsulados: TO3P

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HIH30N120TF datasheet

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HIH30N120TF

Dec 2013 VCES = 1200 V IC = 30 A HIH30N120TF VCE(sat) typ = 2.0 V 1200V Field Stop Trench IGBT TO-3P FEATURES 1200V Field Stop Trench Technology G High Speed Switching C E Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation Absolute Maximum Ratings Symbol Parameter Value Units VCES Collector-Emitter Voltage 1200 V Collector Current Cont

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HIH30N120TF

Feb 2023 HIH30N140IH-DB 1400V N-Channel Trench Field Stop IGBT Features Key Parameters Very Low VCE(sat) Parameter Value Unit VCES 1400 V Extremely low switching loss IC 30 A Excellent stability and uniformity VCE(sat) 1.50 V 1400V Breakdown voltage Eoff 1.41 mJ Maximum Junction temperature, TJ(max)=175 Package & Internal Circuit Application TO-3PN SYMBOL

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HIH30N120TF

Dec 2013 VCES = 600 V IC = 30 A HIH30N60BP VCE(sat) typ = 2.2 V 600V PT IGBT TO-3P FEATURES Low VCE(sat) G Maximum Junction Temperature 150 C E Short Circuit Withstand Time 5 Designed for Operation Between 1-20KHz Very tight Parameter Distribution High Ruggedness, Temperature stable behavior Absolute Maximum Ratings Symbol Parameter Value Units VCES Collector-

Otros transistores... RGTH60TS65D, RGTH80TS65, RGTH80TS65D, RJP4007ANS, HIA20N60BP, HIA30N60BP, HIH20N60BP, HIH25N120TN, IXGH60N60, HIH30N60BP, HIL40N120TF, HIL40N120VF, APT100GN120JDQ4, APT100GT60JR, APT12GT60KRG, APT13GP120BDQ1G, APT150GN120JDQ4