APT150GT120JR - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APT150GT120JR
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 830 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 170 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 3.7 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 165 nS
Coesⓘ - Capacitancia de salida, typ: 1400 pF
Paquete / Cubierta: SOT227
Búsqueda de reemplazo de APT150GT120JR - IGBT
APT150GT120JR Datasheet (PDF)
apt150gt120jr.pdf
APT150GT120JR1200V, 150A, VCE(ON) = 3.2V TypicalThunderbolt IGBTThe Thunderbolt IGBT is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT offers superior ruggedness and ultrafast switching speed.Features RBSOA and SCSOA Rated Low Forward Voltage Drop"UL Recognized" High Frequency Switching to 50KHz L
apt150gn60jdq4.pdf
TYPICAL PERFORMANCE CURVES APT150GN60JDQ4 600V APT150GN60JDQ4Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built
apt150gn120j.pdf
TYPICAL PERFORMANCE CURVES APT150GN120J 1200V APT150GN120JUtilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built-in
apt150gn60j.pdf
TYPICAL PERFORMANCE CURVES APT150GN60J 600V APT150GN60JUtilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built-in ga
apt150gn60b2g.pdf
TYPICAL PERFORMANCE CURVES APT150GN60B2(G) 600V APT150GN60B2(G)Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coeffi cient. A built-
apt150gn60ldq4g.pdf
600V APT150GN60LDQ4(G)Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coeffi cient. A built-in gate resistor ensures extremely relia
apt150gn120jdq4.pdf
APT150GN120JDQ41200V, 150A, VCE(ON) = 3.2V TypicalUtilizing the latest Field Stop and Trench Gate technologies, these IGBTs have ultra low V and are ideal for low frequency applications that require absolute minimum CE(ON) conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive V temperature coefficient. A built-in gate resistor
Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
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