APT150GT120JR Todos los transistores

 ..1. Size:202K  microsemi
 apt150gt120jr.pdf

APT150GT120JR 1200V, 150A, VCE(ON) = 3.2V Typical Thunderbolt IGBT The Thunderbolt IGBT is a new generation of high voltage power IGBTs. Using Non- Punch-Through Technology, the Thunderbolt IGBT offers superior ruggedness and ultrafast switching speed. Features RBSOA and SCSOA Rated Low Forward Voltage Drop "UL Recognized" High Frequency Switching to 50KHz L

 7.1. Size:534K  apt
 apt150gn60jdq4.pdf

TYPICAL PERFORMANCE CURVES APT150GN60JDQ4 600V APT150GN60JDQ4 Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built

 7.2. Size:418K  apt
 apt150gn120j.pdf

TYPICAL PERFORMANCE CURVES APT150GN120J 1200V APT150GN120J Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built-in

 7.3. Size:483K  apt
 apt150gn60j.pdf

TYPICAL PERFORMANCE CURVES APT150GN60J 600V APT150GN60J Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built-in ga

 7.4. Size:168K  microsemi
 apt150gn60b2g.pdf

TYPICAL PERFORMANCE CURVES APT150GN60B2(G) 600V APT150GN60B2(G) Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coeffi cient. A built-

 7.5. Size:235K  microsemi
 apt150gn60ldq4g.pdf

600V APT150GN60LDQ4(G) Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coeffi cient. A built-in gate resistor ensures extremely relia

 7.6. Size:195K  microsemi
 apt150gn120jdq4.pdf

APT150GN120JDQ4 1200V, 150A, VCE(ON) = 3.2V Typical Utilizing the latest Field Stop and Trench Gate technologies, these IGBT s have ultra low V and are ideal for low frequency applications that require absolute minimum CE(ON) conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive V temperature coefficient. A built-in gate resistor