APT15GN120KG Todos los transistores

 

APT15GN120KG - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: APT15GN120KG
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 195 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 45 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.1 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 9 nS
   Coesⓘ - Capacitancia de salida, typ: 65 pF
   Paquete / Cubierta: TO220
     - Selección de transistores por parámetros

 

APT15GN120KG Datasheet (PDF)

 ..1. Size:192K  apt
apt15gn120kg.pdf pdf_icon

APT15GN120KG

TYPICAL PERFORMANCE CURVES APT15GN120K(G) 1200V APT15GN120K APT15GN120KG**G Denotes RoHS Compliant, Pb Free Terminal Finish.Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum TO-220conduction loss. Easy paralleling is a result of very tight parameter dist

 4.1. Size:224K  apt
apt15gn120bdq1g.pdf pdf_icon

APT15GN120KG

TYPICAL PERFORMANCE CURVES APT15GN120BDQ1(G) 1200V APT15GN120BDQ1 APT15GN120BDQ1G**G Denotes RoHS Compliant, Pb Free Terminal Finish.Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter dis

 4.2. Size:160K  microsemi
apt15gn120sdq1g.pdf pdf_icon

APT15GN120KG

TYPICAL PERFORMANCE CURVESAPT15GN120BD_SDQ1(G)APT15GN120BDQ1 APT15GN120SDQ1 APT15GN120BDQ1(G) APT15GN120SDQ1(G)1200V *G Denotes RoHS Compliant, Pb Free Terminal Finish.Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra (B)low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling

 8.1. Size:45K  1
apt15gf170br.pdf pdf_icon

APT15GN120KG

APT15GF170BR1700V 25AFast IGBTTO-247The Fast IGBT is a new generation of high voltage power IGBTs. UsingNon-Punch Through Technology the Fast IGBT offers superior ruggedness,fast switching speed and low Collector-Emitter On voltage.G Low Forward Voltage Drop High Freq. Switching to 20KHzCCE Low Tail Current Ultra Low Leakage Current Avalanche Rated

Otros transistores... HIL40N120TF , HIL40N120VF , APT100GN120JDQ4 , APT100GT60JR , APT12GT60KRG , APT13GP120BDQ1G , APT150GN120JDQ4 , APT150GT120JR , RJP63F3DPP-M0 , APT15GP60BG , APT15GP60S , APT15GP90BDQ1G , APT15GT60KRG , APT25GP90BDQ1G , APT30GN60BDQ2G , APT30GP60BDQ1G , APT30GT60KRG .

History: DM2G75SH6A | APTGT50X170BTP3 | CM75RL-12NF | RJH1CM5DPQ-E0 | FGD3050G2 | CM75TX-24S | IXGT30N60C3D1

 

 
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