APT15GP60BG Todos los transistores

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APT15GP60BG - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APT15GP60BG

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 250

Tensión colector-emisor (Vce): 600

Voltaje de saturación colector-emisor (Vce sat): 2.7

Tensión emisor-compuerta (Veg): 20

Corriente del colector DC máxima (Ic): 56

Temperatura operativa máxima (Tj), °C: 150

Tiempo de elevación: 12

Capacitancia de salida (Cc), pF: 210

Empaquetado / Estuche: TO247

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APT15GP60BG Datasheet (PDF)

1.1. apt15gp60bdf1.pdf Size:126K _apt

APT15GP60BG
APT15GP60BG

APT15GP60BDF1 600V ® POWER MOS 7 IGBT TO-247 The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. G C E • Low Conduction Loss • 100 kHz operation @ 400V, 19A C • Low Gate Charge

1.2. apt15gp60bdq1.pdf Size:253K _apt

APT15GP60BG
APT15GP60BG

TYPICAL PERFORMANCE CURVES APT15GP60BDQ1 APT15GP60BDQ1 600V ® POWER MOS 7 IGBT TO-247 The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. G C E • Low Conduction Loss • 100 kHz ope

1.3. apt15gp60b.pdf Size:86K _apt

APT15GP60BG
APT15GP60BG

APT15GP60B 600V ® POWER MOS 7 IGBT TO-247 The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. G C E • Low Conduction Loss • 100 kHz operation @ 400V, 19A C • Low Gate Charge

1.4. apt15gp60k.pdf Size:86K _apt

APT15GP60BG
APT15GP60BG

APT15GP60K 600V ® POWER MOS 7 IGBT TO-220 The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. G • Low Conduction Loss • 100 kHz operation @ 400V, 19A C C E • Low Gate Charge

1.5. apt15gp60bsc.pdf Size:211K _apt

APT15GP60BG
APT15GP60BG

TYPICAL PERFORMANCE CURVES APT15GP60BSC APT15GP60BSC 600V ® POWER MOS 7 IGBT TO-247 The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. G C E • Low Conduction Loss • 100 kHz oper

1.6. apt15gp60bdq1g.pdf Size:1026K _igbt_a

APT15GP60BG
APT15GP60BG

TYPICAL PERFORMANCE CURVES APT15GP60BDQ1 APT15GP60BDQ1 600V ® POWER MOS 7 IGBT TO-247 The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. G C E • Low Conduction Loss • 100 kHz ope

1.7. apt15gp60bg.pdf Size:265K _igbt_a

APT15GP60BG
APT15GP60BG

APT15GP60B APT15GP60S 600V ® POWER MOS 7 IGBT The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. • Low Conduction Loss • 100 kHz operation @ 400V, 19A C • Low Gate Charge • 20

1.8. apt15gp60s.pdf Size:265K _igbt_a

APT15GP60BG
APT15GP60BG

APT15GP60B APT15GP60S 600V ® POWER MOS 7 IGBT The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. • Low Conduction Loss • 100 kHz operation @ 400V, 19A C • Low Gate Charge • 20

1.9. apt15gp60kg.pdf Size:206K _igbt_a

APT15GP60BG
APT15GP60BG

APT15GP60K 600V ® POWER MOS 7 IGBT TO-220 The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. G • Low Conduction Loss • 100 kHz operation @ 400V, 19A C C E • Low Gate Charge

1.10. apt15gp60bdlg.pdf Size:202K _igbt_a

APT15GP60BG
APT15GP60BG

APT15GP60BDL(G) 600V, 15A, VCE(ON) = 2.2V Typical Resonant Mode Combi IGBT® The POWER MOS 7® IGBT used in this resonant mode combi is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. Features Typical Applicat

Otros transistores... HIL40N120VF , APT100GN120JDQ4 , APT100GT60JR , APT12GT60KRG , APT13GP120BDQ1G , APT150GN120JDQ4 , APT150GT120JR , APT15GN120KG , RJH60F7ADPK , APT15GP60S , APT15GP90BDQ1G , APT15GT60KRG , APT25GP90BDQ1G , APT30GN60BDQ2G , APT30GP60BDQ1G , APT30GT60KRG , APT35GN120SG .

 


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