HGTP10N50F1D Todos los transistores

 

HGTP10N50F1D IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HGTP10N50F1D
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 75 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 500 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 12 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.5(max) V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 35 nS
   Paquete / Cubierta: TO220
 

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Principales características: HGTP10N50F1D

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HGTP10N50F1D

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 hgth12n40c1 hgth12n40e1 hgth12n50c1 hgth12n50e1 hgtm12n40c1 hgtm12n40e1 hgtm12n50c1 hgtm12n50e1 hgtp10n40c1 hgtp10n40e1 hgtp10n50c1 hgtp10n50e1.pdf pdf_icon

HGTP10N50F1D

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HGTP10N50F1D

HGTP10N40C1, 40E1, 50C1, 50E1, S E M I C O N D U C T O R HGTH12N40C1, 40E1, 50C1, 50E1 10A, 12A, 400V and 500V N-Channel IGBTs April 1995 Features Packages HGTH-TYPES JEDEC TO-218AC 10A and 12A, 400V and 500V EMITTER VCE(ON) 2.5V Max. COLLECTOR TFI 1 s, 0.5 s GATE COLLECTOR (FLANGE) Low On-State Voltage Fast Switching Speeds High Input Impedance

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HGTP10N50F1D

HGTP10N40C1D, HGTP10N40E1D, S E M I C O N D U C T O R HGTP10N50C1D, HGTP10N50E1D 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes April 1995 Features Package JEDEC TO-220AB 10A, 400V and 500V VCE(ON) 2.5V Max. EMITTER COLLECTOR TFALL 1 s, 0.5 s GATE Low On-State Voltage COLLECTOR Fast Switching Speeds (FLANGE) High Input Impeda

MOSTRAR MÁS

Otros transistores... HGTP10N40C1D , HGTP10N40E1 , HGTP10N40E1D , HGTP10N40F1D , HGTP10N50C1 , HGTP10N50C1D , HGTP10N50E1 , HGTP10N50E1D , FGA25N120ANTD , HGTP11N120CN , HGTM12N50C1 , HGTM12N50E1 , HGTP12N60A4 , HGTP12N60A4D , HGTP12N60B3 , HGTP12N60B3D , HGTP12N60C3 .

 

 
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