APT65GP60B2G Todos los transistores

 ..1. Size:90K  apt
 apt65gp60b2g.pdf

APT65GP60B2 600V POWER MOS 7 IGBT T-MaxTM The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. G C E Low Conduction Loss 100 kHz operation @ 400V, 54A C Low Gate Charge

 3.1. Size:88K  apt
 apt65gp60b2.pdf

APT65GP60B2 600V POWER MOS 7 IGBT T-MaxTM The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. G C E Low Conduction Loss 100 kHz operation @ 400V, 54A C Low Gate Charge

 5.1. Size:96K  apt
 apt65gp60j.pdf

APT65GP60J 600V POWER MOS 7 IGBT The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency "UL Recognized" switchmode power supplies. ISOTOP Low Conduction Loss 100 kHz operation @ 400V, 33A C Low Gate

 5.2. Size:478K  apt
 apt65gp60jdq2.pdf

TYPICAL PERFORMANCE CURVES APT65GP60JDQ2 600V APT65GP60JDQ2 POWER MOS 7 IGBT The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. "UL Recognized" ISOTOP file # E145592 Low

 5.3. Size:444K  apt
 apt65gp60l2dq2g.pdf

TYPICAL PERFORMANCE CURVES APT65GP60L2DQ2 600V APT65GP60L2DQ2 APT65GP60L2DQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT TO-264 Max The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high

 5.4. Size:197K  apt
 apt65gp60l2df2.pdf

TYPICAL PERFORMANCE CURVES APT65GP60L2DF2 APT65GP60L2DF2 600V POWER MOS 7 IGBT TO-264 Max The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. G C Low Conduction Loss 100 kH

 5.5. Size:204K  apt
 apt65gp60jdf2.pdf

TYPICAL PERFORMANCE CURVES APT65GP60JDF2 APT65GP60JDF2 600V POWER MOS 7 IGBT The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency "UL Recognized" switchmode power supplies. ISOTOP Low Conduction Loss 1