APT65GP60JDQ2 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APT65GP60JDQ2
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 431 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 130 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.7 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 55 nS
Coesⓘ - Capacitancia de salida, typ: 580 pF
Paquete / Cubierta: SOT227
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APT65GP60JDQ2 Datasheet (PDF)
apt65gp60jdq2.pdf
TYPICAL PERFORMANCE CURVES APT65GP60JDQ2 600V APT65GP60JDQ2POWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies."UL Recognized"ISOTOP file # E145592 Low
apt65gp60jdf2.pdf
TYPICAL PERFORMANCE CURVES APT65GP60JDF2APT65GP60JDF2600V POWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequency"UL Recognized"switchmode power supplies. ISOTOP Low Conduction Loss 1
apt65gp60j.pdf
APT65GP60J600V POWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequency"UL Recognized"switchmode power supplies. ISOTOP Low Conduction Loss 100 kHz operation @ 400V, 33AC Low Gate
apt65gp60l2dq2g.pdf
TYPICAL PERFORMANCE CURVES APT65GP60L2DQ2 600V APT65GP60L2DQ2 APT65GP60L2DQ2G**G Denotes RoHS Compliant, Pb Free Terminal Finish.POWER MOS 7 IGBTTO-264MaxThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high
apt65gp60b2.pdf
APT65GP60B2600V POWER MOS 7 IGBTT-MaxTMThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies.GCE Low Conduction Loss 100 kHz operation @ 400V, 54AC Low Gate Charge
apt65gp60b2g.pdf
APT65GP60B2600V POWER MOS 7 IGBTT-MaxTMThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies.GCE Low Conduction Loss 100 kHz operation @ 400V, 54AC Low Gate Charge
apt65gp60l2df2.pdf
TYPICAL PERFORMANCE CURVES APT65GP60L2DF2APT65GP60L2DF2600V POWER MOS 7 IGBTTO-264MaxThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies.GC Low Conduction Loss 100 kH
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