SKM150GB12T4 Todos los transistores

 

SKM150GB12T4 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SKM150GB12T4
   Tipo de transistor: IGBT
   Polaridad de transistor: N
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 232 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.8 V @25℃
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 42 nS
   Coesⓘ - Capacitancia de salida, typ: 580 pF
   Paquete / Cubierta: MODULE
     - Selección de transistores por parámetros

 

SKM150GB12T4 Datasheet (PDF)

 ..1. Size:457K  semikron
skm150gb12t4.pdf pdf_icon

SKM150GB12T4

SKM150GB12T4Absolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES 1200 VIC Tc =25C 232 ATj = 175 CTc =80C 179 AICnom 150 AICRM ICRM = 3xICnom 450 AVGES -20 ... 20 VVCC = 800 VSEMITRANS2tpsc VGE 15 V Tj = 150 C 10 sVCES 1200 VTj -40 ... 175 CFast IGBT4 ModulesInverse diodeIF Tc =25C 189 ATj = 175 CSKM150GB12T4Tc =80C

 0.1. Size:401K  semikron
skm150gb12t4g.pdf pdf_icon

SKM150GB12T4

SKM150GB12T4GAbsolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES 1200 VIC Tc =25C 223 ATj = 175 CTc =80C 172 AICnom 150 AICRM ICRM = 3xICnom 450 AVGES -20 ... 20 VVCC = 800 VSEMITRANS3tpsc VGE 15 V Tj = 150 C 10 sVCES 1200 VTj -40 ... 175 CFast IGBT4 ModulesInverse diodeIF Tc =25C 183 ATj = 175 CSKM150GB12T4GTc =80

 4.1. Size:142K  semikron
skm150gb125d.pdf pdf_icon

SKM150GB12T4

SEMITRANS MAbsolute Maximum RatingsValuesUltra Fast IGBT ModulesSymbol Conditions 1)UnitsVCES 1200 VVCGR RGE = 20 k 1200 V SKM 150 GB 125 DIC Tcase = 25/80 C 150 / 100 4) AICM Tcase = 25/80 C; tp = 1 ms 300 / 200 4) APreliminary Data 5)VGES 20 VPtot per IGBT, Tcase = 25 C 1040 WTj, (Tstg) 40 ... +150 (125) CVisol AC, 1 min. 2500 Vhumidity DIN 400

 4.2. Size:491K  semikron
skm150gb12v.pdf pdf_icon

SKM150GB12T4

SKM150GB12VAbsolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES Tj =25C 1200 VIC Tc =25C 231 ATj = 175 CTc =80C 176 AICnom 150 AICRM ICRM = 3xICnom 450 AVGES -20 ... 20 VVCC = 720 VSEMITRANS 2tpsc VGE 20 V Tj =125C 10 sVCES 1200 VTj -40 ... 175 CInverse diodeIF Tc =25C 189 ATj = 175 CSKM150GB12VTc =80C 141 AIFnom

Otros transistores... SKM100GB12V , SKM100GB176D , SKM145GAL176D , SKM145GB066D , SKM145GB176D , SKM150GAL12T4 , SKM150GAL12V , SKM150GAR12T4 , GT30G122 , SKM150GB12T4G , SKM150GB12V , SKM150GB12VG , SKM150GM12T4G , SML50HB06 , SPM1001 , SPM1002 , SPM1003 .

History: DAZF100G120XCA | IRG4PC30FPBF | IRG7RC10FD

 

 
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History: DAZF100G120XCA | IRG4PC30FPBF | IRG7RC10FD

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