SKM150GB12T4 Todos los transistores

 

SKM150GB12T4 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SKM150GB12T4

Tipo de transistor: IGBT

Polaridad de transistor: N-Channel

Tensión máxima colector-emisor |Vce|, V: 1200

Tensión máxima puerta-emisor |Vge|, V: 20

Colector de Corriente Continua a 25℃ |Ic|, A: 232

Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 1.8

Temperatura máxima de unión (Tj), ℃: 175

Tiempo de subida (tr), typ, nS: 42

Capacitancia de salida (Cc), typ, pF: 580

Paquete / Cubierta: MODULE

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SKM150GB12T4 Datasheet (PDF)

 ..1. Size:457K  semikron
skm150gb12t4.pdf

SKM150GB12T4 SKM150GB12T4

SKM150GB12T4Absolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES 1200 VIC Tc =25C 232 ATj = 175 CTc =80C 179 AICnom 150 AICRM ICRM = 3xICnom 450 AVGES -20 ... 20 VVCC = 800 VSEMITRANS2tpsc VGE 15 V Tj = 150 C 10 sVCES 1200 VTj -40 ... 175 CFast IGBT4 ModulesInverse diodeIF Tc =25C 189 ATj = 175 CSKM150GB12T4Tc =80C

 0.1. Size:401K  semikron
skm150gb12t4g.pdf

SKM150GB12T4 SKM150GB12T4

SKM150GB12T4GAbsolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES 1200 VIC Tc =25C 223 ATj = 175 CTc =80C 172 AICnom 150 AICRM ICRM = 3xICnom 450 AVGES -20 ... 20 VVCC = 800 VSEMITRANS3tpsc VGE 15 V Tj = 150 C 10 sVCES 1200 VTj -40 ... 175 CFast IGBT4 ModulesInverse diodeIF Tc =25C 183 ATj = 175 CSKM150GB12T4GTc =80

 4.1. Size:599K  semikron
skm150gb123d.pdf

SKM150GB12T4 SKM150GB12T4

 4.2. Size:491K  semikron
skm150gb12v.pdf

SKM150GB12T4 SKM150GB12T4

SKM150GB12VAbsolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES Tj =25C 1200 VIC Tc =25C 231 ATj = 175 CTc =80C 176 AICnom 150 AICRM ICRM = 3xICnom 450 AVGES -20 ... 20 VVCC = 720 VSEMITRANS 2tpsc VGE 20 V Tj =125C 10 sVCES 1200 VTj -40 ... 175 CInverse diodeIF Tc =25C 189 ATj = 175 CSKM150GB12VTc =80C 141 AIFnom

 4.3. Size:435K  semikron
skm150gb12vg.pdf

SKM150GB12T4 SKM150GB12T4

SKM150GB12VGAbsolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES Tj =25C 1200 VIC Tc =25C 222 ATj = 175 CTc =80C 169 AICnom 150 AICRM ICRM = 3xICnom 450 AVGES -20 ... 20 VVCC = 720 VSEMITRANS 3tpsc VGE 20 V Tj =125C 10 sVCES 1200 VTj -40 ... 175 CInverse diodeIF Tc =25C 187 ATj = 175 CSKM150GB12VGTc =80C 140 AIFno

Otros transistores... SKM100GB12V , SKM100GB176D , SKM145GAL176D , SKM145GB066D , SKM145GB176D , SKM150GAL12T4 , SKM150GAL12V , SKM150GAR12T4 , IGW30N60T , SKM150GB12T4G , SKM150GB12V , SKM150GB12VG , SKM150GM12T4G , SML50HB06 , SPM1001 , SPM1002 , SPM1003 .

 

 
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