STGP35HF60W Todos los transistores

 

STGP35HF60W IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: STGP35HF60W

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 200 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 35 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.65 V @25℃

trⓘ - Tiempo de subida, typ: 15 nS

Coesⓘ - Capacitancia de salida, typ: 235 pF

Encapsulados: TO220

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STGP35HF60W datasheet

 ..1. Size:771K  st
stgp35hf60w.pdf pdf_icon

STGP35HF60W

STGP35HF60W 35 A, 600 V Ultrafast IGBT Datasheet - production data Features Improved Eoff at elevated temperature Minimal tail current Low conduction losses Applications Welding 3 2 1 High frequency converters Power factor correction TO-220 Description This Ultrafast IGBT is developed using a new planar technology to yield a device with tighter switch

 8.1. Size:741K  st
stgb35n35lz stgp35n35lz.pdf pdf_icon

STGP35HF60W

STGB35N35LZ STGP35N35LZ EAS 450 mJ, 345 V, internally clamped IGBT Features TAB Low threshold voltage TAB Low on-voltage drop High voltage clamping feature 3 1 Gate and gate-emitter integrated resistors TAB D PAK 3 2 1 I PAK Application Automotive ignition 3 2 1 TO-220 Description This application specific IGBT utilizes the most advanced PowerMES

 8.2. Size:741K  st
stgp35n35lz.pdf pdf_icon

STGP35HF60W

STGB35N35LZ STGP35N35LZ EAS 450 mJ, 345 V, internally clamped IGBT Features TAB Low threshold voltage TAB Low on-voltage drop High voltage clamping feature 3 1 Gate and gate-emitter integrated resistors TAB D PAK 3 2 1 I PAK Application Automotive ignition 3 2 1 TO-220 Description This application specific IGBT utilizes the most advanced PowerMES

 9.1. Size:657K  st
stgf30nc60s stgp30nc60s stgwf30nc60s.pdf pdf_icon

STGP35HF60W

STGF30NC60S STGP30NC60S, STGWF30NC60S 30 A, 600 V, fast IGBT Features TAB Optimized performance for medium operating frequencies up to 5 kHz in hard switching Low on-voltage drop (VCE(sat)) 3 3 2 High current capability 2 1 1 TO-220 TO-220FP Application 1 1 1 3 Motor drive 2 1 TO-3PF Description This device utilizes the advanced PowerMESHTM process result

Otros transistores... SPM1002 , SPM1003 , SPM1004 , SPM1005 , SPM1006 , SSM20G45EGH , SSM20G45EGJ , SSM28G45EM , TGD30N40P , T0160NB45A , T1500TB25E , SKM75GAR063D , SKM75GB12T4 , SKM75GB12V , SKM75GB176D , SKM800GA126D , SKM800GA176D .

History: IXYP20N65C3D1M

 

 

 


 
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