HGTP12N60B3 Todos los transistores

 

HGTP12N60B3 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HGTP12N60B3

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc):

Tensión colector-emisor (Vce): 600

Voltaje de saturación colector-emisor (Vce sat):

Tensión emisor-compuerta (Veg):

Corriente del colector DC máxima (Ic): 27

Temperatura operativa máxima (Tj), °C: 150

Tiempo de elevación:

Capacitancia de salida (Cc), pF:

Empaquetado / Estuche: TO220AB

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HGTP12N60B3 Datasheet (PDF)

5.1. hgtp12n60c3d hgt1s12n60c3d.pdf Size:151K _fairchild_semi

HGTP12N60B3
HGTP12N60B3

HGTP12N60C3D, HGT1S12N60C3DSData Sheet December 200124A, 600V, UFS Series N-Channel IGBT Featureswith Anti-Parallel Hyperfast Diodes 24A, 600V at TC = 25oCThis family of MOS gated high voltage switching devices Typical Fall Time at TJ = 150oC . . . . . . . . . . . . . . . . 210ns combine the best features of MOSFETs and bipolar Short Circuit Rating transistors. The

5.2. hgtg12n60a4d hgtp12n60a4d hgt1s12n60a4d.pdf Size:173K _fairchild_semi

HGTP12N60B3
HGTP12N60B3

HGTG12N60A4D, HGTP12N60A4D,HGT1S12N60A4DSData Sheet December 2001600V, SMPS Series N-Channel IGBT with FeaturesAnti-Parallel Hyperfast Diode >100kHz Operation . . . . . . . . . . . . . . . . . . . . . 390V, 12AThe HGTG12N60A4D, HGTP12N60A4D and 200kHz Operation . . . . . . . . . . . . . . . . . . . . . . . 390V, 9AHGT1S12N60A4DS are MOS gated high voltage switching

 5.3. hgtg12n60a4 hgtp12n60a4 hgt1s12n60a4.pdf Size:207K _fairchild_semi

HGTP12N60B3
HGTP12N60B3

HGTP12N60A4, HGTG12N60A4,HGT1S12N60A4S9AData Sheet August 2003600V, SMPS Series N-Channel IGBTs FeaturesThe HGTP12N60A4, HGTG12N60A4 and >100kHz Operation at 390V, 12AHGT1S12N60A4S9A are MOS gated high voltage switching 200kHz Operation at 390V, 9Adevices combining the best features of MOSFETs and 600V Switching SOA Capabilitybipolar transistors. These devices ha

5.4. hgtp12n60c3 hgt1s12n60c3.pdf Size:169K _fairchild_semi

HGTP12N60B3
HGTP12N60B3

HGTP12N60C3, HGT1S12N60C3SData Sheet December 200124A, 600V, UFS Series N-Channel IGBTs FeaturesThe HGTP12N60C3 and HGT1S12N60C3S are MOS gated 24A, 600V at TC = 25oChigh voltage switching devices combining the best features 600V Switching SOA Capabilityof MOSFETs and bipolar transistors. These devices have the Typical Fall Time. . . . . . . . . . . . . . . . 230ns a

 5.5. hgtp12n60c3.pdf Size:188K _harris_semi

HGTP12N60B3
HGTP12N60B3

HGTP12N60C3, HGT1S12N60C3,S E M I C O N D U C T O R HGT1S12N60C3SAugust 1995 24A, 600V, UFS Series N-Channel IGBTFeatures Packages JEDEC TO-220ABEMITTER 24A, 600V at TC = +25oCCOLLECTORGATE 600V Switching SOA Capability Typical Fall Time - 230ns at TJ = +150oCCOLLECTOR(FLANGE) Short Circuit Rating Low Conduction LossJEDEC TO-262AADescriptionEMITTER

Otros transistores... HGTP10N50E1 , HGTP10N50E1D , HGTP10N50F1D , HGTP11N120CN , HGTP12N40C1 , HGTP12N40E1 , HGTP12N60A4 , HGTP12N60A4D , IRG4PC40W , HGTP12N60B3D , HGTP12N60C3 , HGTP12N60C3D , HGTP12N60D1 , HGTP14N36G3VL , HGTP14N40F3VL , HGTP1N120BN , HGTP1N120BND .

 

 
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