HGTP12N60B3 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HGTP12N60B3 📄📄
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 104 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 27 A
Tjⓘ - Temperatura máxima de unión: 150 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.6 V @25℃
trⓘ - Tiempo de subida, typ: 23 nS
Encapsulados: TO220
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HGTP12N60B3 datasheet
5.1. Size:40K 1
hgtp12n60d1.pdf 
S E M I C O N D U C T O R HGTP12N60D1 12A, 600V N-Channel IGBT April 1995 Features Package JEDEC TO-220AB 12A, 600V EMITTER Latch Free Operation COLLECTOR Typical Fall Time
5.3. Size:115K 1
hgtp12n60a4 hgtg12n60a4 hgt1s12n60a4s.pdf
HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S Data Sheet May 1999 File Number 4656.2 600V, SMPS Series N-Channel IGBT Features The HGTP12N60A4, HGTG12N60A4 and >100kHz Operation at 390V, 12A HGT1S12N60A4S are MOS gated high voltage switching 200kHz Operation at 390V, 9A devices combining the best features of MOSFETs and 600V Switching SOA Capability bipolar transistors. These de
5.7. Size:173K fairchild semi
hgtg12n60a4d hgtp12n60a4d hgt1s12n60a4d.pdf
HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Data Sheet December 2001 600V, SMPS Series N-Channel IGBT with Features Anti-Parallel Hyperfast Diode >100kHz Operation . . . . . . . . . . . . . . . . . . . . . 390V, 12A The HGTG12N60A4D, HGTP12N60A4D and 200kHz Operation . . . . . . . . . . . . . . . . . . . . . . . 390V, 9A HGT1S12N60A4DS are MOS gated high voltage switching
5.8. Size:207K fairchild semi
hgtg12n60a4 hgtp12n60a4 hgt1s12n60a4.pdf
HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S9A Data Sheet August 2003 600V, SMPS Series N-Channel IGBTs Features The HGTP12N60A4, HGTG12N60A4 and >100kHz Operation at 390V, 12A HGT1S12N60A4S9A are MOS gated high voltage switching 200kHz Operation at 390V, 9A devices combining the best features of MOSFETs and 600V Switching SOA Capability bipolar transistors. These devices ha
5.9. Size:169K fairchild semi
hgtp12n60c3 hgt1s12n60c3.pdf
HGTP12N60C3, HGT1S12N60C3S Data Sheet December 2001 24A, 600V, UFS Series N-Channel IGBTs Features The HGTP12N60C3 and HGT1S12N60C3S are MOS gated 24A, 600V at TC = 25oC high voltage switching devices combining the best features 600V Switching SOA Capability of MOSFETs and bipolar transistors. These devices have the Typical Fall Time. . . . . . . . . . . . . . . . 230ns a
5.10. Size:151K fairchild semi
hgtp12n60c3d hgt1s12n60c3d.pdf
HGTP12N60C3D, HGT1S12N60C3DS Data Sheet December 2001 24A, 600V, UFS Series N-Channel IGBT Features with Anti-Parallel Hyperfast Diodes 24A, 600V at TC = 25oC This family of MOS gated high voltage switching devices Typical Fall Time at TJ = 150oC . . . . . . . . . . . . . . . . 210ns combine the best features of MOSFETs and bipolar Short Circuit Rating transistors. The
5.11. Size:574K onsemi
hgtg12n60a4d hgtp12n60a4d hgt1s12n60a4ds.pdf
SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 600 V HGTG12N60A4D, www.onsemi.com HGTP12N60A4D, HGT1S12N60A4DS C The HGTG12N60A4D, HGTP12N60A4D and HGT1S12N60A4DS are MOS gated high voltage switching devices G combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the E low on-state conduction los
5.12. Size:271K onsemi
hgtp12n60c3d hgt1s12n60c3ds.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
5.13. Size:188K harris semi
hgtp12n60c3.pdf
HGTP12N60C3, HGT1S12N60C3, S E M I C O N D U C T O R HGT1S12N60C3S August 1995 24A, 600V, UFS Series N-Channel IGBT Features Packages JEDEC TO-220AB EMITTER 24A, 600V at TC = +25oC COLLECTOR GATE 600V Switching SOA Capability Typical Fall Time - 230ns at TJ = +150oC COLLECTOR (FLANGE) Short Circuit Rating Low Conduction Loss JEDEC TO-262AA Description EMITTER
Otros transistores... HGTP10N50E1, HGTP10N50E1D, HGTP10N50F1D, HGTP11N120CN, HGTM12N50C1, HGTM12N50E1, HGTP12N60A4, HGTP12N60A4D, YGW40N65F1, HGTP12N60B3D, HGTP12N60C3, HGTP12N60C3D, HGTP12N60D1, HGTP14N36G3VL, HGTP14N40F3VL, HGTP1N120BN, HGTP1N120BND
