GT50N322A Todos los transistores

 ..1. Size:144K  toshiba
 gt50n322a.pdf

GT50N322A TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50N322A Voltage Resonance Inverter Switching Application Unit mm Fifth Generation IGBT FRD included between emitter and collector Enhancement mode type High speed IGBT tf = 0.10 s (typ.) (IC = 60 A) FRD trr = 0.8 s (typ.) (di/dt = -20 A/ s) Low saturation voltage VCE (sat)

 7.1. Size:310K  1
 gt50n324.pdf

GT50N324 N IGBT GT50N324 mm 6 FRD IGBT tf = 0.11 s ( ) IC = 60 A

 9.1. Size:901K  rohm
 rgt50ns65d.pdf

RGT50NS65D 650V 25A Field Stop Trench IGBT Data Sheet lOutline LPDS / TO-262 VCES 650V (2) IC(100 C) 25A VCE(sat) (Typ.) 1.65V (1) (3) PD 194W (1)(2)(3) lFeatures lInner Circuit 1) Low Collector - Emitter Saturation Voltage (2) (1) Gate 2) Low Switching Loss (2) Collector *1 3) Short Circuit Withstand Time 5 s (3) Emitter (1) 4) Built in Very Fast & Soft

 9.2. Size:1207K  rohm
 rgt50nl65d.pdf

RGT50NL65D 650V 25A Field Stop Trench IGBT Datasheet Outline LPDL (TO-263L) VCES 650V (2) IC(100 C) 25A VCE(sat) (Typ.) 1.65V (1) (3) PD 194W Features Inner Circuit 1) Low Collector - Emitter Saturation Voltage (2) (1) Gate 2) Low Switching Loss (2) Collector *1 3) Short Circuit Withstand Time 5 s (3) Emitter (1) 4) Built in Very Fast & Soft Recovery FRD *1

 9.3. Size:583K  ixys
 ixgt50n60b2.pdf

VCES = 600 V IXGH 50N60B2 HiPerFASTTM IGBT IC25 = 75 A B2-Class High Speed IGBTs IXGT 50N60B2 VCE(sat) = 2.0 V tfi typ = 65 ns Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V C (TAB) VGES Continuous 20 V G C VGEM Transient 30 V E TO-268 IC25 TC = 25 C (limited by leads) 75 A (IXGT) IC11

 9.4. Size:162K  ixys
 ixgh50n90b2 ixgt50n90b2.pdf

Advance Technical Information VCES = 900 V IXGH 50N90B2 HiPerFASTTM IGBT IC25 = 75 A B2-Class High Speed IGBTs IXGT 50N90B2 VCE(sat) = 2.7 V tfi typ = 200 ns Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TJ = 25 C to 150 C 900 V VCGR TJ = 25 C to 150 C; RGE = 1 M 900 V C (TAB) VGES Continuous 20 V G C VGEM Transient 30 V E TO-268 IC25 TC = 25 C (limit

 9.5. Size:585K  ixys
 ixgh50n60b2 ixgt50n60b2.pdf

VCES = 600 V IXGH 50N60B2 HiPerFASTTM IGBT IC25 = 75 A B2-Class High Speed IGBTs IXGT 50N60B2 VCE(sat) = 2.0 V tfi typ = 65 ns Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V C (TAB) VGES Continuous 20 V G C VGEM Transient 30 V E TO-268 IC25 TC = 25 C (limited by leads) 75 A (IXGT) IC11

 9.6. Size:181K  ixys
 ixgk50n60b ixgt50n60b ixgj50n60b.pdf

IXGH 50N60B HiPerFASTTM IGBT VCES = 600 V IXGK 50N60B IC25 = 75 A IXGT 50N60B VCE(sat) = 2.3 V IXGJ 50N60B tfi(typ) = 120 ns TO-247 AD (IXGH) C C (TAB) Symbol Test Conditions Maximum Ratings E VCES TJ = 25 C to 150 C 600 V TO-268 (D3) ( IXGT) VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V G VGEM Transient 30 V C (TAB) E IC25 TC = 25 C75 A TO-268 Le

 9.7. Size:586K  ixys
 ixgh50n60c2 ixgt50n60c2.pdf

Advance Technical Data VCES = 600 V IXGH 50N60C2 HiPerFASTTM IGBT IC25 = 75 A C2-Class High Speed IGBTs IXGT 50N60C2 VCE(sat) = 2.7 V tfi typ = 48 ns Symbol Test Conditions Maximum Ratings TO-247 AD (IXGH) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V C (TAB) VGES Continuous 20 V G C VGEM Transient 30 V E TO-268 IC25 TC = 25 C (limited by

 9.8. Size:158K  ixys
 ixgt50n90b2.pdf

Advance Technical Information VCES = 900 V IXGH 50N90B2 HiPerFASTTM IGBT IC25 = 75 A B2-Class High Speed IGBTs IXGT 50N90B2 VCE(sat) = 2.7 V tfi typ = 200 ns Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TJ = 25 C to 150 C 900 V VCGR TJ = 25 C to 150 C; RGE = 1 M 900 V C (TAB) VGES Continuous 20 V G C VGEM Transient 30 V E TO-268 IC25 TC = 25 C (limit

 9.9. Size:584K  ixys
 ixgt50n60c2.pdf

Advance Technical Data VCES = 600 V IXGH 50N60C2 HiPerFASTTM IGBT IC25 = 75 A C2-Class High Speed IGBTs IXGT 50N60C2 VCE(sat) = 2.7 V tfi typ = 48 ns Symbol Test Conditions Maximum Ratings TO-247 AD (IXGH) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V C (TAB) VGES Continuous 20 V G C VGEM Transient 30 V E TO-268 IC25 TC = 25 C (limited by

 9.10. Size:567K  kec
 kgt50n60kda.pdf

SEMICONDUCTOR KGT50N60KDA TECHNICAL DATA General Description B KEC NPT Trench IGBTs offer low switching losses, high energy efficiency A O S K and short circuit ruggedness. It is designed for applications such as motor control, uninterrupted power supplies(UPS), general inverters. DIM MILLIMETERS _ + A 15.90 0.30 _ B 5.00 + 0.20 _ C 20.85 + 0.30 FEATURES _ D 3.00 + 0.20