DM2G150SH6N Todos los transistores

 

DM2G150SH6N - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DM2G150SH6N
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 595 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 150 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.1 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 80 nS
   Paquete / Cubierta: MODULE
     - Selección de transistores por parámetros

 

DM2G150SH6N Datasheet (PDF)

 ..1. Size:306K  dawin
dm2g150sh6n.pdf pdf_icon

DM2G150SH6N

D WTMD WTMDM2G150SH6NDAWIN ElectronicsDAWIN ElectronicsJan. 2012High Power Rugged Type IGBT ModuleEquivalent Circuit and Package DescriptionDAWINS IGBT 7DM-2 Package devices are optimized to reduce losses Equivalent Circuit and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors dri

 0.1. Size:254K  dawin
dm2g150sh6ne.pdf pdf_icon

DM2G150SH6N

D WTMD WTMDM2G150SH6NEDAWIN ElectronicsDAWIN ElectronicsJan. 2012High Power Rugged Type IGBT ModuleEquivalent Circuit and Package DescriptionDAWINS IGBT module devices are optimized to reduce losses Equivalent Circuit and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors drives6

 4.1. Size:524K  dawin
dm2g150sh6a.pdf pdf_icon

DM2G150SH6N

D WTMD WTMDM2G150SH6ADAWIN ElectronicsDAWIN ElectronicsAug. 2009High Power NPT & Rugged Type IGBT ModuleDescriptionEquivalent Circuit and Package DAWINS IGBT 7DM-2 Package devices are optimized to reduce losses Equivalent Circuit and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, moto

 5.1. Size:66K  dawin
dm2g150sh12a.pdf pdf_icon

DM2G150SH6N

PreliminaryD WTMD WTMApr. 2008DM2G150SH12ADAWIN ElectronicsDAWIN ElectronicsHigh Power SPT+ & Lugged Type IGBT ModuleDescriptionEquivalent Circuit and Package DAWINS IGBT 7DM-3 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. Equivalent Circuit These IGBT modules are ideally suited for power

Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: STGWA20IH65DF | MMG200S060B6EN | SKM100GAL12T4 | SKM22GD123D | FF100R12RT4 | MMG75HB120H6HN | SGTP50V60FD2PF

 

 
Back to Top

 


 
.