DM2G300SH6NE Todos los transistores

Introduzca al menos 3 números o letras

DM2G300SH6NE - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: DM2G300SH6NE

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 833

Tensión colector-emisor (Vce): 600

Voltaje de saturación colector-emisor (Vce sat): 2.1

Tensión emisor-compuerta (Veg): 20

Corriente del colector DC máxima (Ic): 300

Temperatura operativa máxima (Tj), °C: 150

Tiempo de elevación: 150

Capacitancia de salida (Cc), pF:

Empaquetado / Estuche: MODULE

Búsqueda de reemplazo de DM2G300SH6NE - IGBT

 

DM2G300SH6NE Datasheet (PDF)

1.1. dm2g300sh6a.pdf Size:710K _igbt_a

DM2G300SH6NE
DM2G300SH6NE

DM2G300SH6A Aug. 2009 High Power NPT & Rugged Type IGBT Module Description Equivalent Circuit and Package DAWIN’S IGBT 7DM-3 Package devices are optimized to reduce losses Equivalent Circuit and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors drives and other applications where switching los

1.2. dm2g300sh12a.pdf Size:67K _igbt_a

DM2G300SH6NE
DM2G300SH6NE

Preliminary D WTM D WTM DM2G300SH12A DAWIN Electronics DAWIN Electronics Mar. 2008 High Power SPT+ & Lugged Type IGBT Module Description Equivalent Circuit and Package Equivalent Circuit and Package DAWIN’S IGBT 7DM-3 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. Equivalent Circuit These IGBT modul

1.3. dm2g300sh6ne.pdf Size:307K _igbt_a

DM2G300SH6NE
DM2G300SH6NE

D WTM D WTM DM2G300SH6NE DAWIN Electronics DAWIN Electronics Jan. 2012 High Power Rugged Type IGBT Module Description Equivalent Circuit and Package DAWIN’S IGBT 7DM-2 Package devices are optimized to reduce losses Equivalent Circuit and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors dri

Otros transistores... DM2G150SH6N , DM2G150SH6NE , DM2G200SH12A , DM2G200SH12AE , DM2G200SH6A , DM2G200SH6N , DM2G300SH12A , DM2G300SH6A , IRG4BC30W-S , DM2G400SH6A , DM2G400SH6N , HYG15P120A1K1 , HYG15P120A1K2 , HYG15P120B1K1 , HYG15P120H1K1 , HYG30P120H1K1 , HYG40P120H1S .

 


DM2G300SH6NE
  DM2G300SH6NE
  DM2G300SH6NE
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores

IGBT: IRGC16B60KB | IRGC16B120KB | IRGC15B120UB | IRGC15B120KB | IRGC100B60UB | IRGC100B60KB | IRGC100B120UB | IRGC100B120KB | IGC70T120T6RL | SIGC05T60SNC |


Introduzca al menos 1 números o letras