IXYH20N120C3 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXYH20N120C3
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 278 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 40 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 3.4(max) V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 5 V
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 29 nS
Coesⓘ - Capacitancia de salida, typ: 70 pF
Qgⓘ - Carga total de la puerta, typ: 53 nC
Paquete / Cubierta: TO247
Búsqueda de reemplazo de IXYH20N120C3 - IGBT
IXYH20N120C3 Datasheet (PDF)
ixyh20n120c3.pdf
N E W P R O D U C T B R I E FEfficiency Through Technology1200V XPT IGBTsExtreme-Light Punch-Through IGBTs for High-Speed Hard-Switching ApplicationsOctober 2012OVERVIEWTO-247IXYS Corporation expands its 1200V XPT IGBT product line. With current ratings of up to 220A, these new devices are designed to minimize switching losses in high-voltage, hard-switching applica-tion
ixya20n120c3hv ixyp20n120c3 ixyh20n120c3.pdf
1200V XPTTM VCES = 1200VIXYA20N120C3HVGenX3TM IGBTs IC110 = 20AIXYP20N120C3 VCE(sat) 3.4V IXYH20N120C3tfi(typ) = 108nsHigh-Speed IGBTfor 20-50 kHz SwitchingTO-263HV (IXYA)GESymbol Test Conditions Maximum RatingsC (Tab)VCES TJ = 25C to 175C 1200 VTO-220 (IXYP)VCGR TJ = 25C to 175C, RGE
ixyh20n120c3d1.pdf
1200V XPTTM IGBT VCES = 1200VIXYH20N120C3D1GenX3TM w/ Diode IC110 = 17A VCE(sat) 3.4V tfi(typ) = 108nsHigh-Speed IGBTfor 20-50 kHz SwitchingTO-247 ADSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C, RGE = 1M 1200 VGVGES Continuous 20 VC TabEV
ixyh20n65b3.pdf
Advance Technical InformationXPTTM 650V IGBT VCES = 650VIXYA20N65B3GenX3TM IC110 = 20AIXYP20N65B3 VCE(sat) 2.10V IXYH20N65B3tfi(typ) = 87nsExtreme Light Punch ThroughIGBT for 5-30kHz SwitchingTO-263 (IXYA)GEC (Tab)Symbol Test Conditions Maximum RatingsTO-220 (IXYP)VCES TJ = 25C to 175C 650
ixyh20n65c3.pdf
Preliminary Technical InformationXPTTM 650V IGBT VCES = 650VIXYA20N65C3GenX3TM IC110 = 20AIXYH20N65C3 VCE(sat) 2.50V tfi(typ) = 28nsExtreme Light Punch ThroughIGBT for 20-60 kHz SwitchingTO-263 AA (IXYA)Symbol Test Conditions Maximum RatingsGEVCES TJ = 25C to 175C 650 VC (Tab)VCGR TJ = 25C
Otros transistores... HYG75B120C1S , HYG75P120D1S , IFS100B12N3E4_B31 , IFS100B12N3E4_B39 , IFS150B12N3E4_B31 , IFS75B12N3E4_B31 , IFS75B12N3E4_B32 , IXYH20N120C3D1 , MBQ50T65FDSC , IXYH30N120C3 , IXYH30N120C3D1 , IXA4I1200UC , IXA4IF1200TC , IXA4IF1200UC , IXA70I1200NA , IXYP20N120C3 , IXYP30N120C3 .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2