IXYH40N120B3 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXYH40N120B3
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 577 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 96 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.4 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 5 V
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 50 nS
Coesⓘ - Capacitancia de salida, typ: 117 pF
Qgⓘ - Carga total de la puerta, typ: 87 nC
Paquete / Cubierta: TO247
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IXYH40N120B3 Datasheet (PDF)
ixyh40n120b3.pdf
1200V XPTTM IGBT VCES = 1200VIXYH40N120B3GenX3TM IC110 = 40A VCE(sat) 2.9V tfi(typ) = 183nsExtreme Light Punch ThroughIGBT for 5-30 kHz SwitchingTO-247 ADSymbol Test Conditions Maximum RatingsGC TabVCES TJ = 25C to 175C 1200 V EVCGR TJ = 25C to 175C, RGE = 1M 1200 VG = Gate C = CollectorVGES Continuous 20 VE = Emitter Tab = C
ixyh40n120b3d1.pdf
1200V XPTTM IGBT VCES = 1200VIXYH40N120B3D1GenX3TM w/ Diode IC110 = 40A VCE(sat) 2.9V tfi(typ) = 183nsExtreme Light Punch ThroughIGBT for 5-30 kHz SwitchingTO-247 ADSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C, RGE = 1M 1200 VGVGES Continuous 20 VC TabEVGEM Transient 30 VIC25 TC
ixyh40n120c3.pdf
1200V XPTTM IGBT VCES = 1200VIXYH40N120C3GenX3TM IC110 = 40A VCE(sat) 3.5V tfi(typ) = 50nsHigh-Speed IGBTfor 20-50 kHz SwitchingTO-247 ADSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 1200 VVCGR TJ = 25C to 175C, RGE = 1M 1200 VGVGES Continuous 20 VC TabEVGEM Transien
ixyh40n120c3d1.pdf
1200V XPTTM IGBT VCES = 1200VIXYH40N120C3D1GenX3TM w/ Diode IC90 = 40A VCE(sat) 3.5V tfi(typ) = 50nsHigh-Speed IGBTfor 20-50 kHz SwitchingTO-247 ADSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C, RGE = 1M 1200 VGVGES Continuous 20 VC TabEVGE
Otros transistores... IXYH30N120C3D1 , IXA4I1200UC , IXA4IF1200TC , IXA4IF1200UC , IXA70I1200NA , IXYP20N120C3 , IXYP30N120C3 , IXYR100N120C3 , IKW30N60H3 , IXYH40N120B3D1 , IXYH40N120C3 , IXYH40N120C3D1 , IXYH50N120C3D1 , IXYK100N120C3 , IXYK120N120C3 , SG12N06DP , SG12N06DT .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2