IXYK100N120C3 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXYK100N120C3  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 1150 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 160 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.96 V @25℃

trⓘ - Tiempo de subida, typ: 90 nS

Coesⓘ - Capacitancia de salida, typ: 353 pF

Encapsulados: TO264

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IXYK100N120C3 datasheet

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IXYK100N120C3

N E W P R O D U C T B R I E F Efficiency Through Technology 1200V XPT IGBTs Extreme-Light Punch-Through IGBTs for High-Speed Hard-Switching Applications October 2012 OVERVIEW TO-247 IXYS Corporation expands its 1200V XPT IGBT product line. With current ratings of up to 220A, these new devices are designed to minimize switching losses in high-voltage, hard-switching applica- tion

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IXYK100N120C3

1200V XPTTM IGBT VCES = 1200V IXYK100N120C3 GenX3TM IC110 = 100A IXYX100N120C3 VCE(sat) 3.50V tfi(typ) = 110ns High-Speed IGBT for 20-50 kHz Switching TO-264 (IXYK) Symbol Test Conditions Maximum Ratings G C VCES TJ = 25 C to 175 C 1200 V E Tab VCGR TJ = 25 C to 175 C, RGE = 1M 1200 V VGES Continuous

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IXYK100N120C3

Preliminary Technical Information 1200V XPTTM IGBTs VCES = 1200V IXYK100N120B3 GenX3TM IC110 = 100A IXYX100N120B3 VCE(sat) 2.6V tfi(typ) = 240ns Extreme Light Punch Through IGBT for 5-30 kHz Switching TO-264 (IXYK) G Symbol Test Conditions Maximum Ratings C E VCES TJ = 25 C to 175 C 1200 V Tab VCGR TJ = 25 C to 175 C, RGE = 1M 1200 V PLUS247 (IX

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IXYK100N120C3

MOSTRAR MÁS

Otros transistores... IXYP20N120C3, IXYP30N120C3, IXYR100N120C3, IXYH40N120B3, IXYH40N120B3D1, IXYH40N120C3, IXYH40N120C3D1, IXYH50N120C3D1, CRG15T120BNR3S, IXYK120N120C3, SG12N06DP, SG12N06DT, SG12N06P, SG12N06T, SG15N12DP, SG15N12P, SG200N06S