SGP23N60UFD Todos los transistores

 ..1. Size:606K  fairchild semi
 sgp23n60ufd.pdf

IGBT SGP23N60UFD Ultra-Fast IGBT General Description Features Fairchild's UFD series of Insulated Gate Bipolar Transistors High speed switching (IGBTs) provides low conduction and switching losses. Low saturation voltage VCE(sat) = 2.1 V @ IC = 12A The UFD series is designed for applications such as motor High input impedance control and general inverters where high speed

 4.1. Size:551K  fairchild semi
 sgp23n60uf.pdf

IGBT SGP23N60UF Ultra-Fast IGBT General Description Features Fairchild's UF series of Insulated Gate Bipolar Transistors High speed switching (IGBTs) provides low conduction and switching losses. Low saturation voltage VCE(sat) = 2.1 V @ IC = 12A The UF series is designed for applications such as motor High input impedance control and general inverters where high speed sw

 4.2. Size:229K  samsung
 sgp23n60uf.pdf

N-CHANNEL IGBT SGP23N60UF FEATURES TO-220 * High Speed Switching * Low Saturation Voltage VCE(sat) = 1.95 V (@ Ic=12A) * High Input Impedance APPLICATIONS C * AC & DC Motor controls * General Purpose Inverters * Robotics , Servo Controls G * Power Supply * Lamp Ballast E ABSOLUTE MAXIMUM RATINGS Symbol Rating Units Characteristics VCES 600 V Collector-Emitter Voltage