SGP23N60UFD Todos los transistores

 

SGP23N60UFD - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SGP23N60UFD
   Tipo de transistor: IGBT + Diode
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 73 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 23 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.1 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.5 V
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 27 nS
   Coesⓘ - Capacitancia de salida, typ: 100 pF
   Qgⓘ - Carga total de la puerta, typ: 49 nC
   Paquete / Cubierta: TO220F

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SGP23N60UFD Datasheet (PDF)

 ..1. Size:606K  fairchild semi
sgp23n60ufd.pdf

SGP23N60UFD
SGP23N60UFD

IGBTSGP23N60UFDUltra-Fast IGBTGeneral Description FeaturesFairchild's UFD series of Insulated Gate Bipolar Transistors High speed switching(IGBTs) provides low conduction and switching losses. Low saturation voltage : VCE(sat) = 2.1 V @ IC = 12AThe UFD series is designed for applications such as motor High input impedancecontrol and general inverters where high speed

 4.1. Size:551K  fairchild semi
sgp23n60uf.pdf

SGP23N60UFD
SGP23N60UFD

IGBTSGP23N60UFUltra-Fast IGBTGeneral Description FeaturesFairchild's UF series of Insulated Gate Bipolar Transistors High speed switching(IGBTs) provides low conduction and switching losses. Low saturation voltage : VCE(sat) = 2.1 V @ IC = 12AThe UF series is designed for applications such as motor High input impedancecontrol and general inverters where high speed sw

 4.2. Size:229K  samsung
sgp23n60uf.pdf

SGP23N60UFD
SGP23N60UFD

N-CHANNEL IGBT SGP23N60UFFEATURESTO-220* High Speed Switching* Low Saturation Voltage : VCE(sat) = 1.95 V (@ Ic=12A)* High Input ImpedanceAPPLICATIONSC* AC & DC Motor controls* General Purpose Inverters* Robotics , Servo ControlsG* Power Supply* Lamp Ballast EABSOLUTE MAXIMUM RATINGS Symbol Rating UnitsCharacteristicsVCES 600 VCollector-Emitter Voltage

Otros transistores... SG50N06D3S , SG50N06DS , SG50N06DT , SG50N06S , SG50N06T , SG75S12S , SG7N06DP , SG7N06P , IRG4PC50U , VS-GT100LA120UX , VS-GT100NA120UX , VS-GT100TP120N , VS-GT100TP60N , VS-GT105LA120UX , VS-GT105NA120UX , VS-GT140DA60U , VS-GT175DA120U .

 

 
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