VS-GT100TP60N - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

VS-GT100TP60N Datasheet (PDF)

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VS-GT100TP60Nwww.vishay.comVishay SemiconductorsHalf Bridge IGBT Power Module, 600 V, 100 AFEATURES Low VCE(on) trench IGBT technology 5 s short circuit capability VCE(on) with positive temperature coefficient Maximum junction temperature 175 C Low inductance case Fast and soft reverse recovery antiparallel FWD Isolated copper baseplate using DCB (

4.1. Size:184K vishay
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VS-GT100TP120Nwww.vishay.comVishay SemiconductorsHalf Bridge IGBT Power Module, 1200 V, 100 AFEATURES Low VCE(sat) trench IGBT technology 10 s short circuit capability VCE(sat) with positive temperature coefficient Maximum junction temperature 175 C Low inductance case Fast and soft reverse recovery antiparallel FWD Isolated copper baseplate using

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VS-GT100LA120UXwww.vishay.comVishay SemiconductorsLow Side Chopper IGBT SOT-227(Trench IGBT), 100 AFEATURES Trench IGBT technology Very low VCE(on) Square RBSOA HEXFRED clamping diode 10 s short circuit capability Fully isolated packageSOT-227 Very low internal inductance ( 5 nH typical) Industry standard outline UL approved

6.2. Size:172K vishay
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VS-GT100NA120UXwww.vishay.comVishay SemiconductorsHigh Side Chopper IGBT SOT-227(Trench IGBT), 100 AFEATURES Trench IGBT technology Very low VCE(on) Square RBSOA HEXFRED clamping diode 10 s short circuit capability Fully isolated packageSOT-227 Very low internal inductance ( 5 nH typical) Industry standard outline UL approved

Otros transistores... SG50N06T , SG75S12S , SG7N06DP , SG7N06P , SGP23N60UFD , VS-GT100LA120UX , VS-GT100NA120UX , VS-GT100TP120N , RJH60F7BDPQ-A0 , VS-GT105LA120UX , VS-GT105NA120UX , VS-GT140DA60U , VS-GT175DA120U , VS-GT300FD060N , VS-GT300YH120N , VS-GT400TH120N , VS-GT400TH120U .