VS-GT400TH60N Todos los transistores

 ..1. Size:155K  vishay
 vs-gt400th60n.pdf

VS-GT400TH60N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, 2-in-1 Package, 600 V and 400 A FEATURES Low VCE(on) trench IGBT technology Low switching losses 5 s short circuit capability VCE(on) with positive temperature coefficient Maximum junction temperature 175 C Low inductance case Fast and soft reverse recovery antiparallel FWD

 4.1. Size:127K  vishay
 vs-gt400th120n.pdf

VS-GT400TH120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, 2-in-1 Package, 1200 V and 400 A FEATURES Low VCE(on) trench IGBT technology Low switching losses 10 s short circuit capability VCE(on) with positive temperature coefficient Maximum junction temperature 150 C Low inductance case Fast and soft reverse recovery antiparallel FW

 4.2. Size:292K  vishay
 vs-gt400th120u.pdf

VS-GT400TH120U www.vishay.com Vishay Semiconductors Molding Type Module IGBT, 2-in-1 Package, 1200 V, 400 A FEATURES Low VCE(on) trench IGBT technology 10 s short circuit capability VCE(on) with positive temperature coefficient Maximum junction temperature 175 C Low inductance case Fast and soft reverse recovery antiparallel FWD Isolated copper basepl

 9.1. Size:1021K  vishay
 vs-gt50tp60n.pdf

VS-GT50TP60N www.vishay.com Vishay Semiconductors Half Bridge IGBT Power Module, 600 V, 50 A FEATURES Low VCE(on) trench IGBT technology 5 s short circuit capability VCE(on) with positive temperature coefficient Maximum junction temperature 175 C Low inductance case Fast and soft reverse recovery antiparallel FWD Isolated copper baseplate using DCB (Di

 9.2. Size:181K  vishay
 vs-gt100tp60n.pdf

VS-GT100TP60N www.vishay.com Vishay Semiconductors Half Bridge IGBT Power Module, 600 V, 100 A FEATURES Low VCE(on) trench IGBT technology 5 s short circuit capability VCE(on) with positive temperature coefficient Maximum junction temperature 175 C Low inductance case Fast and soft reverse recovery antiparallel FWD Isolated copper baseplate using DCB (

 9.3. Size:163K  vishay
 vs-gt300fd060n.pdf

VS-GT300FD060N www.vishay.com Vishay Semiconductors DIAP Low Profile 3-Levels Half Bridge Inverter Stage, 300 A FEATURES Trench plus Field Stop IGBT technology FRED Pt antiparallel and clamping diodes Short circuit capability Low stray internal inductances Low switching loss UL approved file E78996 Material categorization for definitions of compliance

 9.4. Size:153K  vishay
 vs-gt105na120ux.pdf

VS-GT105NA120UX www.vishay.com Vishay Semiconductors "High Side Chopper" IGBT SOT-227 (Trench IGBT), 100 A FEATURES Trench IGBT technology Very low VCE(on) Square RBSOA HEXFRED clamping diode 10 s short circuit capability Fully isolated package SOT-227 Speed 4 kHz to 30 kHz Very low internal inductance ( 5 nH typical) Industry standard ou

 9.5. Size:154K  vishay
 vs-gt105la120ux.pdf

VS-GT105LA120UX www.vishay.com Vishay Semiconductors "Low Side Chopper" IGBT SOT-227 (Trench IGBT), 100 A FEATURES Trench IGBT technology Very low VCE(on) Square RBSOA HEXFRED clamping diode 10 s short circuit capability Fully isolated package Speed 4 kHz to 30 kHz SOT-227 Very low internal inductance ( 5 nH typical) Industry standard ou

 9.6. Size:184K  vishay
 vs-gt100tp120n.pdf

VS-GT100TP120N www.vishay.com Vishay Semiconductors Half Bridge IGBT Power Module, 1200 V, 100 A FEATURES Low VCE(sat) trench IGBT technology 10 s short circuit capability VCE(sat) with positive temperature coefficient Maximum junction temperature 175 C Low inductance case Fast and soft reverse recovery antiparallel FWD Isolated copper baseplate using

 9.7. Size:172K  vishay
 vs-gt100la120ux.pdf

VS-GT100LA120UX www.vishay.com Vishay Semiconductors Low Side Chopper IGBT SOT-227 (Trench IGBT), 100 A FEATURES Trench IGBT technology Very low VCE(on) Square RBSOA HEXFRED clamping diode 10 s short circuit capability Fully isolated package SOT-227 Very low internal inductance ( 5 nH typical) Industry standard outline UL approved

 9.8. Size:189K  vishay
 vs-gt300yh120n.pdf

VS-GT300YH120N www.vishay.com Vishay Semiconductors DIAP Trench IGBT Power Module - 1200 V, 300 A Current Fed Inverter Topology FEATURES Trench IGBT technology with positive temperature coefficient Low switching losses Maximum junction temperature 150 C 10 s short circuit capability Low inductance case Double INT-A-PAK HEXFRED antiparallel and series

 9.9. Size:299K  vishay
 vs-gt140da60u.pdf

VS-GT140DA60U www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor (Trench IGBT), 140 A FEATURES Trench IGBT technology with positive temperature coefficient Square RBSOA 3 s short circuit capability FRED Pt antiparallel diodes with ultrasoft reverse recovery TJ maximum = 175 C SOT-227 Fully isolated package Very low internal i

 9.10. Size:88K  vishay
 vs-gt50tp120n.pdf

 9.11. Size:89K  vishay
 vs-gt75np120n.pdf

 9.12. Size:172K  vishay
 vs-gt100na120ux.pdf

VS-GT100NA120UX www.vishay.com Vishay Semiconductors High Side Chopper IGBT SOT-227 (Trench IGBT), 100 A FEATURES Trench IGBT technology Very low VCE(on) Square RBSOA HEXFRED clamping diode 10 s short circuit capability Fully isolated package SOT-227 Very low internal inductance ( 5 nH typical) Industry standard outline UL approved

 9.13. Size:274K  vishay
 vs-gt175da120u.pdf

VS-GT175DA120U www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor (Trench IGBT), 175 A FEATURES Trench IGBT technology with positive temperature coefficient Square RBSOA 10 s short circuit capability HEXFRED antiparallel diodes with ultrasoft reverse recovery TJ maximum = 150 C SOT-227 Fully isolated package Speed 4 kHz to 30