VS-GT75NP120N - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

VS-GT75NP120Nwww.vishay.comVishay SemiconductorsMolding Type Module IGBT, Chopper in 1 Package, 1200 V, 75 AFEATURES High short circuit capability, self limiting to 6 x IC 10 s short circuit capability VCE(on) with positive temperature coefficient Maximum junction temperature 150 C Low inductance case Fast and soft reverse recovery antiparallel FWD

VS-GT50TP60Nwww.vishay.comVishay SemiconductorsHalf Bridge IGBT Power Module, 600 V, 50 AFEATURES Low VCE(on) trench IGBT technology 5 s short circuit capability VCE(on) with positive temperature coefficient Maximum junction temperature 175 C Low inductance case Fast and soft reverse recovery antiparallel FWD Isolated copper baseplate using DCB (Di

VS-GT100TP60Nwww.vishay.comVishay SemiconductorsHalf Bridge IGBT Power Module, 600 V, 100 AFEATURES Low VCE(on) trench IGBT technology 5 s short circuit capability VCE(on) with positive temperature coefficient Maximum junction temperature 175 C Low inductance case Fast and soft reverse recovery antiparallel FWD Isolated copper baseplate using DCB (

VS-GT300FD060Nwww.vishay.comVishay SemiconductorsDIAP Low Profile 3-Levels Half Bridge Inverter Stage, 300 AFEATURES Trench plus Field Stop IGBT technology FRED Pt antiparallel and clamping diodes Short circuit capability Low stray internal inductances Low switching loss UL approved file E78996 Material categorization: for definitions of compliance

VS-GT105NA120UXwww.vishay.comVishay Semiconductors"High Side Chopper" IGBT SOT-227(Trench IGBT), 100 AFEATURES Trench IGBT technology Very low VCE(on) Square RBSOA HEXFRED clamping diode 10 s short circuit capability Fully isolated packageSOT-227 Speed 4 kHz to 30 kHz Very low internal inductance ( 5 nH typical) Industry standard ou

VS-GT105LA120UXwww.vishay.comVishay Semiconductors"Low Side Chopper" IGBT SOT-227(Trench IGBT), 100 AFEATURES Trench IGBT technology Very low VCE(on) Square RBSOA HEXFRED clamping diode 10 s short circuit capability Fully isolated package Speed 4 kHz to 30 kHzSOT-227 Very low internal inductance ( 5 nH typical) Industry standard ou

VS-GT400TH60Nwww.vishay.comVishay SemiconductorsMolding Type Module IGBT,2-in-1 Package, 600 V and 400 AFEATURES Low VCE(on) trench IGBT technology Low switching losses 5 s short circuit capability VCE(on) with positive temperature coefficient Maximum junction temperature 175 C Low inductance case Fast and soft reverse recovery antiparallel FWD

VS-GT100TP120Nwww.vishay.comVishay SemiconductorsHalf Bridge IGBT Power Module, 1200 V, 100 AFEATURES Low VCE(sat) trench IGBT technology 10 s short circuit capability VCE(sat) with positive temperature coefficient Maximum junction temperature 175 C Low inductance case Fast and soft reverse recovery antiparallel FWD Isolated copper baseplate using

VS-GT400TH120Nwww.vishay.comVishay SemiconductorsMolding Type Module IGBT,2-in-1 Package, 1200 V and 400 AFEATURES Low VCE(on) trench IGBT technology Low switching losses 10 s short circuit capability VCE(on) with positive temperature coefficient Maximum junction temperature 150 C Low inductance case Fast and soft reverse recovery antiparallel FW

VS-GT400TH120Uwww.vishay.comVishay SemiconductorsMolding Type Module IGBT,2-in-1 Package, 1200 V, 400 AFEATURES Low VCE(on) trench IGBT technology 10 s short circuit capability VCE(on) with positive temperature coefficient Maximum junction temperature 175 C Low inductance case Fast and soft reverse recovery antiparallel FWD Isolated copper basepl

VS-GT100LA120UXwww.vishay.comVishay SemiconductorsLow Side Chopper IGBT SOT-227(Trench IGBT), 100 AFEATURES Trench IGBT technology Very low VCE(on) Square RBSOA HEXFRED clamping diode 10 s short circuit capability Fully isolated packageSOT-227 Very low internal inductance ( 5 nH typical) Industry standard outline UL approved

VS-GT300YH120Nwww.vishay.comVishay SemiconductorsDIAP Trench IGBT Power Module - 1200 V, 300 A Current Fed Inverter TopologyFEATURES Trench IGBT technology with positivetemperature coefficient Low switching losses Maximum junction temperature 150 C 10 s short circuit capability Low inductance caseDouble INT-A-PAK HEXFRED antiparallel and series

VS-GT140DA60Uwww.vishay.comVishay SemiconductorsInsulated Gate Bipolar Transistor (Trench IGBT), 140 AFEATURES Trench IGBT technology with positivetemperature coefficient Square RBSOA 3 s short circuit capability FRED Pt antiparallel diodes with ultrasoft reverse recovery TJ maximum = 175 CSOT-227 Fully isolated package Very low internal i

VS-GT50TP120Nwww.vishay.comVishay SemiconductorsMolding Type Module IGBT, 2 in 1 Package, 1200 V, 50 AFEATURES Low VCE(on) trench IGBT technology Low switching losses 10 s short circuit capability VCE(on) with positive temperature coefficient Maximum junction temperature 175 C Low inductance case Fast and soft reverse recovery antiparallel FWD

VS-GT100NA120UXwww.vishay.comVishay SemiconductorsHigh Side Chopper IGBT SOT-227(Trench IGBT), 100 AFEATURES Trench IGBT technology Very low VCE(on) Square RBSOA HEXFRED clamping diode 10 s short circuit capability Fully isolated packageSOT-227 Very low internal inductance ( 5 nH typical) Industry standard outline UL approved

VS-GT175DA120Uwww.vishay.comVishay SemiconductorsInsulated Gate Bipolar Transistor (Trench IGBT), 175 AFEATURES Trench IGBT technology with positivetemperature coefficient Square RBSOA 10 s short circuit capability HEXFRED antiparallel diodes with ultrasoft reverse recovery TJ maximum = 150 CSOT-227 Fully isolated package Speed 4 kHz to 30