DL2G75SH6A Todos los transistores

 

DL2G75SH6A - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DL2G75SH6A
   Tipo de transistor: IGBT + Diode
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 300 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 75 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.95 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 7 V
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 60 nS
   Coesⓘ - Capacitancia de salida, typ: 800 pF
   Qgⓘ - Carga total de la puerta, typ: 300 nC
   Paquete / Cubierta: MODULE
     - Selección de transistores por parámetros

 

DL2G75SH6A Datasheet (PDF)

 ..1. Size:630K  dawin
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DL2G75SH6A

D WTMD WTMDL2G75SH6ADAWIN ElectronicsDAWIN ElectronicsApr. 2008High Power NPT & Lugged Type Dual Co-pack IGBTDescriptionEquivalent Circuit and Package DAWINS IGBT 6DM-2 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. Equivalent Circuit These IGBT modules are ideally suited for power inverters,

 5.1. Size:687K  dawin
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DL2G75SH6A

Discontinuance (Aug. 31, 2013) DL2G75SH6N Jan. 2012 High Power Rugged Type IGBT Module Description Equivalent Circuit and Package DAWINS IGBT 6DM-2 Package devices are optimized to reduce losses Equivalent Circuit and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors drives and othe

 6.1. Size:634K  dawin
dl2g75sh12a.pdf pdf_icon

DL2G75SH6A

D WTMD WTMDL2G75SH12ADAWIN ElectronicsDAWIN ElectronicsApr. 2008High Power SPT+ & Lugged Type Dual Co-pack IGBTDescriptionEquivalent Circuit and Package DAWINS IGBT 6DM-2 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. Equivalent Circuit These IGBT modules are ideally suited for power inverter

Otros transistores... VS-GT50TP60N , VS-GT75NP120N , DL2G100SH6A , DL2G100SH6N , DL2G50SH12A , DL2G50SH6A , DL2G50SH6N , DL2G75SH12A , FGW75N60HD , DL2G75SH6N , DM1GL75SH12A , DM2G100SH12A , DM2G100SH6A , DM2G100SH6N , DM2G150SH12A , DM2G150SH12AE , DM2G150SH6A .

History: IXBN75N170A

 

 
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History: IXBN75N170A

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