DM2G100SH6A Todos los transistores

 

DM2G100SH6A IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: DM2G100SH6A

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 480 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 100 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.95 V @25℃

trⓘ - Tiempo de subida, typ: 45 nS

Coesⓘ - Capacitancia de salida, typ: 950 pF

Encapsulados: MODULE

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DM2G100SH6A datasheet

 ..1. Size:326K  dawin
dm2g100sh6a.pdf pdf_icon

DM2G100SH6A

DM2G100SH6A July. 2010 High Power NPT & Rugged Type IGBT Module Description Equivalent Circuit and Package DAWIN S IGBT module devices are optimized to reduce losses Equivalent Circuit and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors drives and other applications where switching losses ar

 4.1. Size:301K  dawin
dm2g100sh6n.pdf pdf_icon

DM2G100SH6A

DM2G100SH6N Jan. 2012 High Power Rugged Type IGBT Module Description Equivalent Circuit and Package DAWIN S IGBT module devices are optimized to reduce losses Equivalent Circuit and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors drives and other applications where switching losses are sign

 5.1. Size:196K  dawin
dm2g100sh12a.pdf pdf_icon

DM2G100SH6A

Preliminary DM2G100SH12A Apr. 2008 High Power SPT+ & Lugged Type IGBT Module Description Equivalent Circuit and Package DAWIN S IGBT 7DM-2 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. Equivalent Circuit These IGBT modules are ideally suited for power inverters, motors drives and other applications wh

 9.1. Size:66K  dawin
dm2g150sh12a.pdf pdf_icon

DM2G100SH6A

Preliminary D WTM D WTM Apr. 2008 DM2G150SH12A DAWIN Electronics DAWIN Electronics High Power SPT+ & Lugged Type IGBT Module Description Equivalent Circuit and Package DAWIN S IGBT 7DM-3 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. Equivalent Circuit These IGBT modules are ideally suited for power

Otros transistores... DL2G50SH12A , DL2G50SH6A , DL2G50SH6N , DL2G75SH12A , DL2G75SH6A , DL2G75SH6N , DM1GL75SH12A , DM2G100SH12A , FGPF4533 , DM2G100SH6N , DM2G150SH12A , DM2G150SH12AE , DM2G150SH6A , DM2G50SH12A , DM2G50SH6A , DM2G50SH6N , DM2G75SH12A .

History: F3L300R12PT4_B26 | DF400R12KE3 | OST25N65FMF | FD1200R17HP4-K-B2 | F3L300R12ME4-B22 | F3L100R12W2H3-B11 | OST30N65HMF

 

 

 

 

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