DM2G150SH12A Todos los transistores

 

DM2G150SH12A IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: DM2G150SH12A

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 1250 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 150 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.8 V @25℃

trⓘ - Tiempo de subida, typ: 70 nS

Coesⓘ - Capacitancia de salida, typ: 800 pF

Encapsulados: MODULE

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DM2G150SH12A datasheet

 ..1. Size:66K  dawin
dm2g150sh12a.pdf pdf_icon

DM2G150SH12A

Preliminary D WTM D WTM Apr. 2008 DM2G150SH12A DAWIN Electronics DAWIN Electronics High Power SPT+ & Lugged Type IGBT Module Description Equivalent Circuit and Package DAWIN S IGBT 7DM-3 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. Equivalent Circuit These IGBT modules are ideally suited for power

 0.1. Size:199K  dawin
dm2g150sh12ae.pdf pdf_icon

DM2G150SH12A

Preliminary D WTM D WTM DAWIN Electronics DAWIN Electronics DM2G150SH12AE Dec. 2008 High Power SPT+ & Lugged Type IGBT Module Description Equivalent Circuit and Package DAWIN S IGBT 7DM-2 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. Equivalent Circuit These IGBT modules are ideally suited for power

 5.1. Size:306K  dawin
dm2g150sh6n.pdf pdf_icon

DM2G150SH12A

D WTM D WTM DM2G150SH6N DAWIN Electronics DAWIN Electronics Jan. 2012 High Power Rugged Type IGBT Module Equivalent Circuit and Package Description DAWIN S IGBT 7DM-2 Package devices are optimized to reduce losses Equivalent Circuit and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors dri

 5.2. Size:524K  dawin
dm2g150sh6a.pdf pdf_icon

DM2G150SH12A

D WTM D WTM DM2G150SH6A DAWIN Electronics DAWIN Electronics Aug. 2009 High Power NPT & Rugged Type IGBT Module Description Equivalent Circuit and Package DAWIN S IGBT 7DM-2 Package devices are optimized to reduce losses Equivalent Circuit and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, moto

Otros transistores... DL2G50SH6N , DL2G75SH12A , DL2G75SH6A , DL2G75SH6N , DM1GL75SH12A , DM2G100SH12A , DM2G100SH6A , DM2G100SH6N , RJP63K2DPP-M0 , DM2G150SH12AE , DM2G150SH6A , DM2G50SH12A , DM2G50SH6A , DM2G50SH6N , DM2G75SH12A , DM2G75SH6A , DM2G75SH6N .

History: RGS80TSX2DHR | JT015N065CED | RGPR20NS43

 

 

 


History: RGS80TSX2DHR | JT015N065CED | RGPR20NS43

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