DM2G150SH6A IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DM2G150SH6A
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 780 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 150 A
Tjⓘ - Temperatura máxima de unión: 150 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.95 V @25℃
trⓘ - Tiempo de subida, typ: 75 nS
Encapsulados: MODULE
Búsqueda de reemplazo de DM2G150SH6A IGBT
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DM2G150SH6A datasheet
dm2g150sh6a.pdf
D WTM D WTM DM2G150SH6A DAWIN Electronics DAWIN Electronics Aug. 2009 High Power NPT & Rugged Type IGBT Module Description Equivalent Circuit and Package DAWIN S IGBT 7DM-2 Package devices are optimized to reduce losses Equivalent Circuit and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, moto
dm2g150sh6n.pdf
D WTM D WTM DM2G150SH6N DAWIN Electronics DAWIN Electronics Jan. 2012 High Power Rugged Type IGBT Module Equivalent Circuit and Package Description DAWIN S IGBT 7DM-2 Package devices are optimized to reduce losses Equivalent Circuit and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors dri
dm2g150sh6ne.pdf
D WTM D WTM DM2G150SH6NE DAWIN Electronics DAWIN Electronics Jan. 2012 High Power Rugged Type IGBT Module Equivalent Circuit and Package Description DAWIN S IGBT module devices are optimized to reduce losses Equivalent Circuit and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors drives 6
dm2g150sh12a.pdf
Preliminary D WTM D WTM Apr. 2008 DM2G150SH12A DAWIN Electronics DAWIN Electronics High Power SPT+ & Lugged Type IGBT Module Description Equivalent Circuit and Package DAWIN S IGBT 7DM-3 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. Equivalent Circuit These IGBT modules are ideally suited for power
Otros transistores... DL2G75SH6A , DL2G75SH6N , DM1GL75SH12A , DM2G100SH12A , DM2G100SH6A , DM2G100SH6N , DM2G150SH12A , DM2G150SH12AE , MBQ60T65PES , DM2G50SH12A , DM2G50SH6A , DM2G50SH6N , DM2G75SH12A , DM2G75SH6A , DM2G75SH6N , CY20AAJ-8H , CY25AAJ-8F .
History: OST25N65FMF | OST30N65HMF
History: OST25N65FMF | OST30N65HMF
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