SHD724602 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SHD724602
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
Tensión máxima colector-emisor |Vce|, V: 600
Tensión máxima puerta-emisor |Vge|, V: 20
Colector de Corriente Continua a 25℃ |Ic|, A: 45
Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 2.2
Tensión máxima de puerta-umbral |VGE(th)|, V: 7
Temperatura máxima de unión (Tj), ℃: 150
Tiempo de subida (tr), typ, nS: 17
Capacitancia de salida (Cc), typ, pF: 145
Paquete / Cubierta: TO-258
Búsqueda de reemplazo de SHD724602 - IGBT
SHD724602 Datasheet (PDF)
shd724602.pdf
SENSITRONSHD724402SEMICONDUCTOR TECHNICAL DATA DATA SHEET 994, REV. B Formerly part number SHDG1024 600 VOLT, 40 AMP IGBT DEVICE HIGH SPEED, IMPROVED SCSOA WITH FAST REVERSE RECOVERY DIODE ELECTRICAL CHARACTERISTICS (Tj=250C UNLESS OTHERWISE SPECIFIED) PARAMETER SYMBOL MIN TYP MAX UNIT PARAMETER SYMBOL MIN TYP MAX UNIT IGBT SPECIFICATIONS Collector to Emitter Breakdown
shd724402.pdf
SENSITRONSHD724402SEMICONDUCTOR TECHNICAL DATA DATA SHEET 994, REV. B Formerly part number SHDG1024 600 VOLT, 40 AMP IGBT DEVICE HIGH SPEED, IMPROVED SCSOA WITH FAST REVERSE RECOVERY DIODE ELECTRICAL CHARACTERISTICS (Tj=250C UNLESS OTHERWISE SPECIFIED) PARAMETER SYMBOL MIN TYP MAX UNIT PARAMETER SYMBOL MIN TYP MAX UNIT IGBT SPECIFICATIONS Collector to Emitter Breakdown
shd724502.pdf
SHD724502 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 1004, REV. A Formerly part number SHDG1025 1200 VOLT, 35 AMP IGBT DEVICE HIGH SPEED, IMPROVED SCSOA WITH FAST REVERSE RECOVERY DIODE ELECTRICAL CHARACTERISTICS (Tj=250C UNLESS OTHERWISE SPECIFIED) PARAMETER SYMBOL MIN TYP MAX UNIT PARAMETER SYMBOL MIN TYP MAX UNIT IGBT SPECIFICATIONS Collector to Emitter Bre
shd724401.pdf
SENSITRONSHD724401 SEMICONDUCTOR TECHNICAL DATA DATA SHEET 1006, REV. - Formerly part number SHSMG1009 600 VOLT, 40 AMP IGBT DEVICE HIGH SPEED, IMPROVED SCSOA ELECTRICAL CHARACTERISTICS (Tj=250C UNLESS OTHERWISE SPECIFIED) PARAMETER SYMBOL MIN TYP MAX UNIT PARAMETER SYMBOL MIN TYP MAX UNIT IGBT SPECIFICATIONS Collector to Emitter Breakdown Voltage BVCES 600 - - VIC
Otros transistores... DM2G75SH12A , DM2G75SH6A , DM2G75SH6N , CY20AAJ-8H , CY25AAJ-8F , SHD724401 , SHD724402 , SHD724502 , SGT50T65FD1PT , SHD739601 , SHDG1025 , SHSMG1009 , SHSMG1010 , VS-GB100LH120N , VS-GB100LP120N , VS-GB100NH120N , VS-GB100TH120N .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: BRGH25N120D | BRGH15N120D | BRGB6N65DP | BRG60N60D | BRG10N120D | TT100N120PF1E | TT075U065FQB | TT075U065FBC | TT075N120EBC | TT075N065EQ | TT060U065FQ