VS-GB150LH120N Todos los transistores

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VS-GB150LH120N - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: VS-GB150LH120N

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 1389

Tensión colector-emisor (Vce): 1200

Voltaje de saturación colector-emisor (Vce sat): 1.87

Tensión emisor-compuerta (Veg): 20

Corriente del colector DC máxima (Ic): 150

Temperatura operativa máxima (Tj), °C: 150

Tiempo de elevación: 60

Capacitancia de salida (Cc), pF: 710

Empaquetado / Estuche: MODULE

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VS-GB150LH120N Datasheet (PDF)

1.1. vs-gb150lh120n.pdf Size:129K _igbt

VS-GB150LH120N
VS-GB150LH120N

VS-GB150LH120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, Chopper in 1 Package, 1200 V and 150 A FEATURES • High short circuit capability, self limiting to 6 x IC • 10 µs short circuit capability • VCE(on) with positive temperature coefficient • Maximum junction temperature 150 °C • Low inductance case • Fast and soft reverse recovery antiparallel FW

2.1. vs-gb150ts60npbf.pdf Size:194K _igbt

VS-GB150LH120N
VS-GB150LH120N

VS-GB150TS60NPbF www.vishay.com Vishay Semiconductors INT-A-PAK “Half-Bridge” (Ultrafast Speed IGBT), 138 A FEATURES • Generation 5 Non Punch Through (NPT) technology • Ultrafast: optimized for hard switching speed • Low VCE(on) • 10 µs short circuit capability • Square RBSOA • Positive VCE(on) temperature coefficient • HEXFRED® antiparallel diode with ultras

2.2. vs-gb150th120n.pdf Size:155K _igbt

VS-GB150LH120N
VS-GB150LH120N

VS-GB150TH120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, 2-in-1 Package, 1200 V and 150 A FEATURES • Low VCE(on) SPT + IGBT technology • 10 µs short circuit capability • VCE(on) with positive temperature coefficient • Maximum junction temperature 150 °C • Low inductance case • Fast and soft reverse recovery antiparallel FWD Double INT-A-PAK • Is

2.3. vs-gb150th120u.pdf Size:117K _igbt

VS-GB150LH120N
VS-GB150LH120N

VS-GB150TH120U www.vishay.com Vishay Semiconductors Molding Type Module IGBT, 2 in 1 Package, 1200 V and 150 A FEATURES • 10 µs short circuit capability • Low switching losses • Rugged with ultrafast performance • VCE(on) with positive temperature coefficient • Low inductance case • Fast and soft reverse recovery antiparallel FWD • Isolated copper baseplate using DCB

Otros transistores... VS-GB100LH120N , VS-GB100LP120N , VS-GB100NH120N , VS-GB100TH120N , VS-GB100TH120U , VS-GB100TP120N , VS-GB100TP120U , VS-GB100TS60NPBF , IRGP4068D , VS-GB150TH120N , VS-GB150TH120U , VS-GB150TS60NPBF , VS-GB200LH120N , VS-GB200NH120N , VS-GB200TH120N , VS-GB200TH120U , VS-GB200TS60NPBF .

 


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