VS-GB150TH120N - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

VS-GB150TH120Nwww.vishay.comVishay SemiconductorsMolding Type Module IGBT,2-in-1 Package, 1200 V and 150 AFEATURES Low VCE(on) SPT + IGBT technology 10 s short circuit capability VCE(on) with positive temperature coefficient Maximum junction temperature 150 C Low inductance case Fast and soft reverse recovery antiparallel FWDDouble INT-A-PAK Is

VS-GB150TH120Uwww.vishay.comVishay SemiconductorsMolding Type Module IGBT, 2 in 1 Package, 1200 V and 150 AFEATURES 10 s short circuit capability Low switching losses Rugged with ultrafast performance VCE(on) with positive temperature coefficient Low inductance case Fast and soft reverse recovery antiparallel FWD Isolated copper baseplate using DCB

VS-GB150TS60NPbFwww.vishay.comVishay SemiconductorsINT-A-PAK Half-Bridge (Ultrafast Speed IGBT), 138 AFEATURES Generation 5 Non Punch Through (NPT) technology Ultrafast: optimized for hard switching speed Low VCE(on) 10 s short circuit capability Square RBSOA Positive VCE(on) temperature coefficient HEXFRED antiparallel diode with ultras

VS-GB150LH120Nwww.vishay.comVishay SemiconductorsMolding Type Module IGBT,Chopper in 1 Package, 1200 V and 150 AFEATURES High short circuit capability, self limiting to 6 x IC 10 s short circuit capability VCE(on) with positive temperature coefficient Maximum junction temperature 150 C Low inductance case Fast and soft reverse recovery antiparallel FW