VS-GB300AH120N - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: VS-GB300AH120N
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 2500 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 300 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.9 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 7 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 55 nS
Coesⓘ - Capacitancia de salida, typ: 1500 pF
Paquete / Cubierta: MODULE
Búsqueda de reemplazo de VS-GB300AH120N IGBT
VS-GB300AH120N Datasheet (PDF)
vs-gb300ah120n.pdf

VS-GB300AH120Nwww.vishay.comVishay SemiconductorsMolding Type Module IGBT, 1-in-1 Package, 1200 V and 300 AFEATURES High short circuit capability, self limiting to 6 x IC 10 s short circuit capability VCE(on) with positive temperature coefficient Low inductance case Fast and soft reverse recovery antiparallel FWD Isolated copper baseplate using DCB (Dir
vs-gb300th120u.pdf

VS-GB300TH120Uwww.vishay.comVishay SemiconductorsMolding Type Module IGBT,2-in-1 Package, 1200 V and 300 AFEATURES 10 s short circuit capability VCE(on) with positive temperature coefficient Maximum junction temperature 150 C Low switching losses Rugged with ultrafast performance Low inductance caseDouble INT-A-PAK Fast and soft reverse recovery
vs-gb300nh120n.pdf

VS-GB300NH120Nwww.vishay.comVishay SemiconductorsMolding Type Module IGBT,Chopper in 1 Package, 1200 V and 300 AFEATURES Low VCE(on) SPT + IGBT technology 10 s short circuit capability VCE(on) with positive temperature coefficient Low inductance case Fast and soft reverse recovery antiparallel FWD Isolated copper baseplate using DCB (Direct Copper Bon
vs-gb300lh120n.pdf

VS-GB300LH120Nwww.vishay.comVishay SemiconductorsMolding Type Module IGBT,Chopper in 1 Package, 1200 V and 300 AFEATURES Low VCE(on) SPT + IGBT technology 10 s short circuit capability VCE(on) with positive temperature coefficient Low inductance case Fast and soft reverse recovery antiparallel FWD Isolated copper baseplate using DCB (Direct Copper Dou
Otros transistores... VS-GB200TH120N , VS-GB200TH120U , VS-GB200TS60NPBF , VS-GA100TS60SFPBF , VS-GA200HS60S1PBF , VS-GA200SA60UP , VS-GA200TH60S , VS-GA250SA60S , SGT60N60FD1P7 , VS-GB300LH120N , VS-GB300NH120N , VS-GB300TH120N , VS-GB300TH120U , VS-GB400AH120N , VS-GB400AH120U , VS-GB400TH120N , VS-GB400TH120U .
History: MG12300D-BA1MM | MIXA30W1200TMH | APT60GF120JRDQ3 | IXXK110N65B4H1 | MKI80-06T6K | AOK40B120P1 | SGP23N60UF
History: MG12300D-BA1MM | MIXA30W1200TMH | APT60GF120JRDQ3 | IXXK110N65B4H1 | MKI80-06T6K | AOK40B120P1 | SGP23N60UF



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