VS-GB300TH120U IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: VS-GB300TH120U
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 2119 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 300 A
Tjⓘ - Temperatura máxima de unión: 150 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 3.1 V @25℃
trⓘ - Tiempo de subida, typ: 142 nS
Coesⓘ - Capacitancia de salida, typ: 2250 pF
Encapsulados: MODULE
Búsqueda de reemplazo de VS-GB300TH120U IGBT
- Selección ⓘ de transistores por parámetros
VS-GB300TH120U datasheet
vs-gb300th120u.pdf
VS-GB300TH120U www.vishay.com Vishay Semiconductors Molding Type Module IGBT, 2-in-1 Package, 1200 V and 300 A FEATURES 10 s short circuit capability VCE(on) with positive temperature coefficient Maximum junction temperature 150 C Low switching losses Rugged with ultrafast performance Low inductance case Double INT-A-PAK Fast and soft reverse recovery
vs-gb300th120n.pdf
VS-GB300TH120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, 2-in-1 Package, 1200 V and 300 A FEATURES 10 s short circuit capability VCE(on) with positive temperature coefficient Maximum junction temperature 150 C Low inductance case Fast and soft reverse recovery antiparallel FWD Isolated copper baseplate using DCB (Direct Copper Bondin
vs-gb300nh120n.pdf
VS-GB300NH120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, Chopper in 1 Package, 1200 V and 300 A FEATURES Low VCE(on) SPT + IGBT technology 10 s short circuit capability VCE(on) with positive temperature coefficient Low inductance case Fast and soft reverse recovery antiparallel FWD Isolated copper baseplate using DCB (Direct Copper Bon
vs-gb300lh120n.pdf
VS-GB300LH120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, Chopper in 1 Package, 1200 V and 300 A FEATURES Low VCE(on) SPT + IGBT technology 10 s short circuit capability VCE(on) with positive temperature coefficient Low inductance case Fast and soft reverse recovery antiparallel FWD Isolated copper baseplate using DCB (Direct Copper Dou
Otros transistores... VS-GA200HS60S1PBF , VS-GA200SA60UP , VS-GA200TH60S , VS-GA250SA60S , VS-GB300AH120N , VS-GB300LH120N , VS-GB300NH120N , VS-GB300TH120N , SGH80N60UFD , VS-GB400AH120N , VS-GB400AH120U , VS-GB400TH120N , VS-GB400TH120U , VS-GB50LA120UX , VS-GB50LP120N , VS-GB50NA120UX , VS-GB50TP120N .
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
Popular searches
2sk2586 | 13005 transistor | ecg123a | irfp360 | bc108 equivalent | irfp4568 | mj15004 | ksc2073