VS-GB50LA120UX Todos los transistores

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VS-GB50LA120UX - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: VS-GB50LA120UX

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 242

Tensión colector-emisor (Vce): 1200

Voltaje de saturación colector-emisor (Vce sat): 3.22

Tensión emisor-compuerta (Veg): 20

Corriente del colector DC máxima (Ic): 57

Temperatura operativa máxima (Tj), °C: 150

Tiempo de elevación: 53

Capacitancia de salida (Cc), pF:

Empaquetado / Estuche: SOT-227

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VS-GB50LA120UX Datasheet (PDF)

1.1. vs-gb50la120ux.pdf Size:172K _igbt

VS-GB50LA120UX
VS-GB50LA120UX

VS-GB50LA120UX www.vishay.com Vishay Semiconductors “Low Side Chopper” IGBT SOT-227 (Ultrafast IGBT), 50 A FEATURES • NPT Gen 5 IGBT technology • Square RBSOA • HEXFRED® clamping diode • Positive VCE(on) temperature coefficient • Fully isolated package SOT-227 • Very low internal inductance ( 5 nH typical) • Industry standard outline • UL approved file E78

2.1. vs-gb50lp120n.pdf Size:120K _igbt

VS-GB50LA120UX
VS-GB50LA120UX

VS-GB50LP120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, Chopper in 1 Package, 1200 V and 50 A FEATURES • High short circuit capability, self limiting to 6 x IC • 10 µs short circuit capability • Low inductance case • Fast and soft reverse recovery antiparallel FWD • Isolated copper baseplate using DCB (Direct Copper Bonding) technology • VCE(on) w

3.1. vs-gb50yf120n.pdf Size:221K _igbt

VS-GB50LA120UX
VS-GB50LA120UX

VS-GB50YF120N www.vishay.com Vishay Semiconductors IGBT Fourpack Module, 50 A FEATURES • Square RBSOA • HEXFRED® low Qrr, low switching energy • Positive VCE(on) temperature coefficient • Copper baseplate • Low stray inductance design • Designed and qualified for industrial market • UL approved file E78996 ECONO2 4PACK • Material categorization: for definitions of

3.2. vs-gb50na120ux.pdf Size:173K _igbt

VS-GB50LA120UX
VS-GB50LA120UX

VS-GB50NA120UX www.vishay.com Vishay Semiconductors “High Side Chopper” IGBT SOT-227 (Ultrafast IGBT), 50 A FEATURES • NPT Gen 5 IGBT technology • Square RBSOA • HEXFRED® clamping diode • Positive VCE(on) temperature coefficient • Fully isolated package SOT-227 • Very low internal inductance ( 5 nH typical) • Industry standard outline • UL approved file E7

3.3. vs-gb50tp120n.pdf Size:88K _igbt

VS-GB50LA120UX
VS-GB50LA120UX

VS-GB50TP120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, 2 in 1 Package, 1200 V, 50 A FEATURES • High short circuit capability, self limiting to 6 x IC • 10 µs short circuit capability • VCE(on) with positive temperature coefficient • Maximum junction temperature 150 °C • Low inductance case • Fast and soft reverse recovery antiparallel FWD • Isol

Otros transistores... VS-GB300LH120N , VS-GB300NH120N , VS-GB300TH120N , VS-GB300TH120U , VS-GB400AH120N , VS-GB400AH120U , VS-GB400TH120N , VS-GB400TH120U , IRG4PF50WD , VS-GB50LP120N , VS-GB50NA120UX , VS-GB50TP120N , VS-GB50YF120N , VS-GB55LA120UX , VS-GB55NA120UX , VS-GB600AH120N , VS-GB75LA60UF .

 


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Introduzca al menos 1 números o letras