VS-GB55NA120UX IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: VS-GB55NA120UX
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 242 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 57 A
Tjⓘ - Temperatura máxima de unión: 150 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 3.3 V @25℃
trⓘ - Tiempo de subida, typ: 35 nS
Encapsulados: SOT-227
Búsqueda de reemplazo de VS-GB55NA120UX IGBT
- Selección ⓘ de transistores por parámetros
VS-GB55NA120UX datasheet
vs-gb55na120ux.pdf
VS-GB55NA120UX www.vishay.com Vishay Semiconductors High Side Chopper IGBT SOT-227 (Ultrafast IGBT), 50 A FEATURES NPT Generation V IGBT technology Square RBSOA HEXFRED clamping diode Positive VCE(on) temperature coefficient Fully isolated package Speed 8 kHz to 60 kHz SOT-227 Very low internal inductance ( 5 nH typical) Industry standar
vs-gb55la120ux.pdf
VS-GB55LA120UX www.vishay.com Vishay Semiconductors Low Side Chopper IGBT SOT-227 (Ultrafast IGBT), 50 A FEATURES NPT Generation V IGBT technology Square RBSOA HEXFRED clamping diode Positive VCE(on) temperature coefficient Fully isolated package Speed 8 kHz to 60 kHz SOT-227 Very low internal inductance ( 5 nH typical) Industry standard
vs-gb50yf120n.pdf
VS-GB50YF120N www.vishay.com Vishay Semiconductors IGBT Fourpack Module, 50 A FEATURES Square RBSOA HEXFRED low Qrr, low switching energy Positive VCE(on) temperature coefficient Copper baseplate Low stray inductance design Designed and qualified for industrial market UL approved file E78996 ECONO2 4PACK Material categorization for definitions of
vs-gb50lp120n.pdf
VS-GB50LP120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, Chopper in 1 Package, 1200 V and 50 A FEATURES High short circuit capability, self limiting to 6 x IC 10 s short circuit capability Low inductance case Fast and soft reverse recovery antiparallel FWD Isolated copper baseplate using DCB (Direct Copper Bonding) technology VCE(on) w
Otros transistores... VS-GB400TH120N , VS-GB400TH120U , VS-GB50LA120UX , VS-GB50LP120N , VS-GB50NA120UX , VS-GB50TP120N , VS-GB50YF120N , VS-GB55LA120UX , GT30F131 , VS-GB600AH120N , VS-GB75LA60UF , VS-GB75LP120N , VS-GB75NA60UF , VS-GB75TP120N , VS-GB75TP120U , VS-GB75YF120N , VS-GB75YF120UT .
History: VS-GB600AH120N | SII150N06 | NGTB45N60S2WG
History: VS-GB600AH120N | SII150N06 | NGTB45N60S2WG
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
Popular searches
irf540z | ss8550 transistor | irfp240 mosfet | tip141 | 2n404 | 2n4250 | d882 transistor equivalent | 17n80c3







