HGTP2N120BN Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HGTP2N120BN  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 104 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 12 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.45 V @25℃

trⓘ - Tiempo de subida, typ: 11 nS

Encapsulados: TO220AB

  📄📄 Copiar 

 Búsqueda de reemplazo de HGTP2N120BN IGBT

- Selecciónⓘ de transistores por parámetros

 

HGTP2N120BN datasheet

 ..1. Size:85K  1
 hgtp2n120bn hgtd2n120bns hgt1s120bns.pdf pdf_icon

HGTP2N120BN

HGTP2N120BN, HGTD2N120BNS, HGT1S2N120BNS Data Sheet January 2000 File Number 4696.2 12A, 1200V, NPT Series N-Channel IGBT Features The HGTP2N120BN, HGTD2N120BNS, and 12A, 1200V, TC = 25oC HGT1S2N120BNS are Non-Punch Through (NPT) IGBT 1200V Switching SOA Capability designs. They are new members of the MOS gated high Typical Fall Time. . . . . . . . . . . . . . . . 160ns at

 0.1. Size:87K  1
 hgtp2n120bnd hgt1s2n120bnds.pdf pdf_icon

HGTP2N120BN

HGTP2N120BND, HGT1S2N120BNDS Data Sheet January 2000 File Number 4698.2 12A, 1200V, NPT Series N-Channel IGBT Features with Anti-Parallel Hyperfast Diode 12A, 1200V, TC = 25oC The HGTP2N120BND and HGT1S2N120BNDS are 1200V Switching SOA Capability Non-Punch Through (NPT) IGBT designs. They are new Typical Fall Time. . . . . . . . . . . . . . . . 160ns at TJ = 150oC members o

 5.1. Size:498K  1
 hgtp2n120cn hgt1s2n120cn.pdf pdf_icon

HGTP2N120BN

March 2005 HGTP2N120CN, HGT1S2N120CN 13A, 1200V, NPT Series N-Channel IGBT Features Description 13A, 1200V, TC = 25 C The HGTP2N120CN and HGT1S2N120CN are Non-Punch Through (NPT) IGBT designs. They are new members of the 1200V Switching SOA Capability MOS gated high voltage switching IGBT family. IGBTs combine Typical Fall Time 360ns at TJ = 150 C the best features of MOSF

 5.2. Size:92K  1
 hgtp2n120cnd hgt1s2n120cnds.pdf pdf_icon

HGTP2N120BN

HGTP2N120CND, HGT1S2N120CNDS Data Sheet January 2000 File Number 4681.2 13A, 1200V, NPT Series N-Channel IGBTs Features with Anti-Parallel Hyperfast Diodes 13A, 1200V, TC = 25oC The HGTP2N120CND and HGT1S2N120CNDS are 1200V Switching SOA Capability Non-Punch Through (NPT) IGBT designs. They are new Typical Fall Time. . . . . . . . . . . . . . . . 360ns at TJ = 150oC members

MOSTRAR MÁS

Otros transistores... HGTP1N120BND, HGTP1N120CN, HGTP1N120CND, HGTP20N35G3VL, HGTP20N60A4, HGTP20N60B3, HGTP20N60C3, HGTP20N60C3R, CRG40T65AK5HD, HGTP2N120BND, HGTP2N120CN, HGTP2N120CND, HGTP3N60A4, HGTP3N60A4D, HGTP3N60B3, HGTP3N60B3D, HGTP3N60C3