VS-GB75YF120N Todos los transistores

 

VS-GB75YF120N - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: VS-GB75YF120N
   Tipo de transistor: IGBT + Diode
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 270 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 67 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 3.4 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 6 V
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 71 nS
   Qgⓘ - Carga total de la puerta, typ: 630 nC
   Paquete / Cubierta: MODULE
 

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VS-GB75YF120N Datasheet (PDF)

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VS-GB75YF120N

VS-GB75YF120Nwww.vishay.comVishay SemiconductorsIGBT Fourpack Module, 75 AFEATURES Square RBSOA HEXFRED low Qrr, low switching energy Positive VCE(on) temperature coefficient Copper baseplate Low stray inductance design Designed and qualified for industrial market UL approved file E78996 ECONO2 4PACK Material categorization: for definitions of

 2.1. Size:224K  vishay
vs-gb75yf120ut.pdf pdf_icon

VS-GB75YF120N

VS-GB75YF120UTwww.vishay.comVishay SemiconductorsIGBT Fourpack Module, 75 AFEATURES Square RBSOA HEXFRED low Qrr, low switching energy Positive VCE(on) temperature coefficient Copper baseplate Low stray inductance design UL approved file E78996 Material categorization: for definitions of compliance ECONO2 4PACK please see www.vishay.com/doc?99912

 7.1. Size:88K  vishay
vs-gb75tp120u.pdf pdf_icon

VS-GB75YF120N

VS-GB75TP120Uwww.vishay.comVishay SemiconductorsMolding Type Module IGBT,2 in 1 Package, 1200 V, 75 AFEATURES High short circuit capability, self limiting to 6 x IC 10 s short circuit capability VCE(on) with positive temperature coefficient Rugged with ultrafast performance Square RBSOA Low inductance case Fast and soft reverse recovery antiparalle

 7.2. Size:155K  vishay
vs-gb75na60uf.pdf pdf_icon

VS-GB75YF120N

VS-GB75NA60UFwww.vishay.comVishay Semiconductors"High Side Chopper" IGBT SOT-227 (Warp 2 Speed IGBT), 70 AFEATURES NPT warp 2 speed IGBT technology with positive temperature coefficient Higher switching frequency up to 150 kHz Square RBSOA Low VCE(on) FRED Pt hyperfast rectifier Fully isolated packageSOT-227 Very low internal inductance ( 5

Otros transistores... VS-GB55LA120UX , VS-GB55NA120UX , VS-GB600AH120N , VS-GB75LA60UF , VS-GB75LP120N , VS-GB75NA60UF , VS-GB75TP120N , VS-GB75TP120U , GT30G122 , VS-GB75YF120UT , VS-GB90DA120U , VS-GB90DA60U , VS-GB90SA120U , VS-GP100TS60SFPBF , VS-GP250SA60S , VS-GP300TD60S , VS-GP400TD60S .

History: CM1800HCB-34N | 2MBI200VB-120-50 | IXGB75N60BD1 | IXXH80N65B4 | SKM195GAL062D | 1MBH25D-120 | SIF30N65G21F

 

 
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