VS-GP300TD60S Todos los transistores

 

VS-GP300TD60S - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: VS-GP300TD60S
   Tipo de transistor: IGBT + Diode
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 636 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 400 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.3 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 8.8 V
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 214 nS
   Paquete / Cubierta: MODULE
 

 Búsqueda de reemplazo de VS-GP300TD60S IGBT

   - Selección ⓘ de transistores por parámetros

 

VS-GP300TD60S Datasheet (PDF)

 ..1. Size:158K  vishay
vs-gp300td60s.pdf pdf_icon

VS-GP300TD60S

VS-GP300TD60Swww.vishay.comVishay SemiconductorsDual INT-A-PAK Low Profile Half Bridge (Trench PT IGBT), 300 AProprietary Vishay IGBT Silicon L SeriesFEATURES Trench PT IGBT technology Low VCE(on) Square RBSOA HEXFRED antiparallel diode with ultrasoft reverse recovery characteristics Industry standard package Al2O3 DBC UL pending

 9.1. Size:154K  vishay
vs-gp400td60s.pdf pdf_icon

VS-GP300TD60S

VS-GP400TD60Swww.vishay.comVishay SemiconductorsDual INT-A-PAK Low Profile Half Bridge (Trench PT IGBT), 400 AProprietary Vishay IGBT Silicon L SeriesFEATURES Trench PT IGBT technology Low VCE(on) Square RBSOA HEXFRED antiparallel diode with ultrasoft reverse recovery characteristics Industry standard package Al2O3 DBC UL pending

 9.2. Size:275K  vishay
vs-gp250sa60s.pdf pdf_icon

VS-GP300TD60S

VS-GP250SA60Swww.vishay.comVishay SemiconductorsInsulated Gate Bipolar Transistor Trench PT IGBT, 600 V, 250 AProprietary Vishay IGBT Silicon L SeriesFEATURES Standard speed Trench PT IGBT Fully isolated package Very low internal inductance ( 5 nH typical) Industry standard outline UL approved file E78996 Material categorization: for definitio

 9.3. Size:199K  vishay
vs-gp100ts60sfpbf.pdf pdf_icon

VS-GP300TD60S

VS-GP100TS60SFPbFwww.vishay.comVishay SemiconductorsHalf Bridge IGBT INT-A-PAK, (Trench PT IGBT), 100 AProprietary Vishay IGBT Silicon L SeriesFEATURES Trench PT IGBT technology FRED Pt anti-parallel diodes with fast recovery Very low conduction losses Al2O3 DBC UL pending Designed for industrial level Material categorization: for defin

Otros transistores... VS-GB75TP120U , VS-GB75YF120N , VS-GB75YF120UT , VS-GB90DA120U , VS-GB90DA60U , VS-GB90SA120U , VS-GP100TS60SFPBF , VS-GP250SA60S , IKW40T120 , VS-GP400TD60S , VS-ENQ030L120S , VS-ETF075Y60U , VS-ETL015Y120H , F12-25R12KT4G , F12-35R12KT4G , F3L100R07W2E3_B11 , F3L100R12W2H3_B11 .

History: BLG60T65FUL-W

 

 
Back to Top

 


History: BLG60T65FUL-W

VS-GP300TD60S
  VS-GP300TD60S
  VS-GP300TD60S
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores

IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE

 

 

 
Back to Top

 

Popular searches

2sb324 | 2sc1904 | 2sc281 | m28s transistor | 2n3640 | tta1943 transistor | fb4410z | 2sa899

 


 
.