FD1000R17IE4D_B2 Todos los transistores

 

FD1000R17IE4D_B2 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FD1000R17IE4D_B2
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 6250 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1700 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 1000 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 100 nS
   Paquete / Cubierta: MODULE
     - Selección de transistores por parámetros

 

FD1000R17IE4D_B2 Datasheet (PDF)

 0.1. Size:879K  infineon
fd1000r17ie4d b2.pdf pdf_icon

FD1000R17IE4D_B2

/ Technical InformationIGBT-FD1000R17IE4D_B2IGBT-modulesPrimePACK3 and NTCPrimePACK3 module and NTC / Preliminary DataV = 1700VCESI = 1000A / I = 2000AC nom CRM Typical Applications 3 3-Level-Applications

 2.1. Size:658K  infineon
fd1000r17ie4.pdf pdf_icon

FD1000R17IE4D_B2

Technische Information / Technical InformationIGBT-ModuleFD1000R17IE4IGBT-modulesPrimePACK3 Modul und NTCPrimePACK3 module and NTCVorlufige Daten / Preliminary DataV = 1700VCESI = 1000A / I = 2000AC nom CRMTypische Anwendungen Typical Applications 3-Level-Applikationen 3-Level-Applications Chopper-Anwendungen Chopper Applications Hochleistung

 7.1. Size:579K  infineon
fd1000r33he3-k.pdf pdf_icon

FD1000R17IE4D_B2

FD1000R33HE3-KIHM-B Modul mit schnellem Trench/Feldstopp IGBT3 und Emitter Controlled 3 DiodeIHM-B module with fast Trench/Fieldstop IGBT3 and Emitter Controlled 3 diodeV = 3300VCESI = 1000A / I = 2000AC nom CRMPotentielle Anwendungen Potential Applications Chopper-Anwendungen Chopper applications Mittelspannungsantriebe Medium voltage converters Motorantrie

 7.2. Size:600K  infineon
fd1000r33hl3-k.pdf pdf_icon

FD1000R17IE4D_B2

FD1000R33HL3-KIHM-B Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled 3 DiodeIHM-B module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diodeV = 3300VCESI = 1000A / I = 2000AC nom CRMPotentielle Anwendungen Potential Applications Chopper-Anwendungen Chopper applications Mittelspannungsantriebe Medium voltage converters Motorantriebe Motor dr

Otros transistores... FB10R06KL4G , FB15R06KL4B1 , FB15R06W1E3 , FB20R06KL4 , FB20R06W1E3 , FB20R06W1E3_B11 , FB30R06W1E3 , FD1000R17IE4 , RJP63F3DPP-M0 , FD1000R33HE3-K , FD1000R33HL3-K , FD1200R17KE3-K , FD1200R17KE3-K_B2 , FD1400R12IP4D , FD200R12KE3 , FD200R12PT4_B6 , FD250R65KE3-K .

History: MG12300D-BN3MM | MSG50T65FQC | IRG4PC30FPBF | IRGP4062-E | APTLGF140U120T | 6MBP75NA060-01 | APT150GT120JR

 

 
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