FD1000R17IE4D_B2 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FD1000R17IE4D_B2
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 6250 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1700 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 1000 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 100 nS
Paquete / Cubierta: MODULE
- Selección de transistores por parámetros
FD1000R17IE4D_B2 Datasheet (PDF)
fd1000r17ie4d b2.pdf

/ Technical InformationIGBT-FD1000R17IE4D_B2IGBT-modulesPrimePACK3 and NTCPrimePACK3 module and NTC / Preliminary DataV = 1700VCESI = 1000A / I = 2000AC nom CRM Typical Applications 3 3-Level-Applications
fd1000r17ie4.pdf

Technische Information / Technical InformationIGBT-ModuleFD1000R17IE4IGBT-modulesPrimePACK3 Modul und NTCPrimePACK3 module and NTCVorlufige Daten / Preliminary DataV = 1700VCESI = 1000A / I = 2000AC nom CRMTypische Anwendungen Typical Applications 3-Level-Applikationen 3-Level-Applications Chopper-Anwendungen Chopper Applications Hochleistung
fd1000r33he3-k.pdf

FD1000R33HE3-KIHM-B Modul mit schnellem Trench/Feldstopp IGBT3 und Emitter Controlled 3 DiodeIHM-B module with fast Trench/Fieldstop IGBT3 and Emitter Controlled 3 diodeV = 3300VCESI = 1000A / I = 2000AC nom CRMPotentielle Anwendungen Potential Applications Chopper-Anwendungen Chopper applications Mittelspannungsantriebe Medium voltage converters Motorantrie
fd1000r33hl3-k.pdf

FD1000R33HL3-KIHM-B Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled 3 DiodeIHM-B module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diodeV = 3300VCESI = 1000A / I = 2000AC nom CRMPotentielle Anwendungen Potential Applications Chopper-Anwendungen Chopper applications Mittelspannungsantriebe Medium voltage converters Motorantriebe Motor dr
Otros transistores... FB10R06KL4G , FB15R06KL4B1 , FB15R06W1E3 , FB20R06KL4 , FB20R06W1E3 , FB20R06W1E3_B11 , FB30R06W1E3 , FD1000R17IE4 , RJP63F3DPP-M0 , FD1000R33HE3-K , FD1000R33HL3-K , FD1200R17KE3-K , FD1200R17KE3-K_B2 , FD1400R12IP4D , FD200R12KE3 , FD200R12PT4_B6 , FD250R65KE3-K .
History: MG12300D-BN3MM | MSG50T65FQC | IRG4PC30FPBF | IRGP4062-E | APTLGF140U120T | 6MBP75NA060-01 | APT150GT120JR
History: MG12300D-BN3MM | MSG50T65FQC | IRG4PC30FPBF | IRGP4062-E | APTLGF140U120T | 6MBP75NA060-01 | APT150GT120JR



Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M
Popular searches
2n414 | c3998 | c4468 datasheet | 2sc2603 | jcs50n20wt | 2sa1360 | p60nf06 datasheet | 2sc4468